PBSS5360PAS-Q分立半导体产品的晶体管-双极性晶体管（BJT）-单个规格书PDF中文资料

厂商型号	PBSS5360PAS-Q
参数属性	PBSS5360PAS-Q 封装/外壳为3-UDFN 裸露焊盘；包装为卷带（TR）；类别为分立半导体产品的晶体管-双极性晶体管（BJT）-单个；产品描述：TRANS PNP 60V 3A DFN2020D-3
功能描述	60 V, 3A PNP low VCEsat transistor
丝印标识	EA
封装外壳	DFN2020D-3 / 3-UDFN 裸露焊盘
文件大小	309.17 Kbytes
页面数量	15 页
生产厂商	Nexperia B.V. All rights reserved
企业简称	NEXPERIA【安世】
中文名称	安世半导体(中国)有限公司官网
原厂标识
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-7-5 23:00:00
人工找货	PBSS5360PAS-Q价格和库存，欢迎联系客服免费人工找货

1. General description

PNP low VCEsat transistor, encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small

Surface-Mounted Device (SMD) plastic package with medium power capability and visible and

soldarable side pads.

NPN complement: PBSS4360PAS-Q

2. Features and benefits

• Low collector-emitter saturation voltage VCEsat

• High collector current capability IC and ICM

• High collector current gain (hFE) at high IC

• High efficiency due to less heat generation

• High temperature applications up to 175 °C

• Reduced Printed-Circuit Board (PCB) area requirements

• Leadless small SMD plastic package with soldarable side pads

• Exposed heat sink for excellent thermal and electrical conductivity

• Suitable for Automatic Optical Inspection (AOI) of solder joint

• Qualified according to AEC-Q101 and recommended for use in automotive applications

2.1. Applications

• Loadswitch

• Battery-driven devices

• Power management

• Charging circuits

• Power switches (e.g. motors, fans)