通用三极管

Bluecolour

蓝彩电子

40 V low VCEsat PNP transistor

DESCRIPTION PNP low VCEsat transistor in an SC-74 (SOT457) plastic package. FEATURES • Low collector-emitter saturation voltage • High current capability • Improved device reliability due to reduced heat generation. APPLICATIONS • General purpose switching and muting • LCD back-lighting •

文件：61.42 Kbytes 页数：8 Pages

PHI

飞利浦

40 V low VCEsat PNP transistor

DESCRIPTION PNP low VCEsat transistor in a SOT54 plastic package. NPN complement: PBSS4140S. FEATURES • High power dissipation (830 mW) • Ultra low collector-emitter saturation voltage • 1 A continuous current • High current switching • Improved device reliability due to reduced heat gener

文件：60.67 Kbytes 页数：8 Pages

PHI

飞利浦

Silicon PNP transistor in a TO-92 Plastic Package

Descriptions Silicon PNP transistor in a TO-92 Plastic Package. Features High PC, low VCE(sat), high current switching Applications Medium power switching and muting, linear regulators, LCD back-lighting, supply line switching circuits

文件：764.33 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子

Silicon PNP transistor in a SOT-23 Plastic Package

Descriptions Silicon PNP transistor in a SOT-23 Plastic Package. Features Low VCE(sat), high current. Applications General purpose switching and muting, LCD back-lighting, supply line switching circuits.

文件：1.01144 Mbytes 页数：6 Pages

FOSHAN

蓝箭电子

丝印：2H；Package：SOT23；40 V, 1 A PNP low VCEsat BISS transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation

文件：221.68 Kbytes 页数：14 Pages

NEXPERIA

安世

40 V low VCEsat PNP transistor

DESCRIPTION PNP low VCEsat transistor in a SOT23 plastic package. FEATURES • Low collector-emitter saturation voltage • High current capabilities • Improved device reliability due to reduced heat generation. APPLICATIONS • General purpose switching and muting • LCD back lighting • Supply

文件：68.51 Kbytes 页数：9 Pages

PHI

飞利浦

40 V, 1 A PNP low VCEsat BISS transistor

General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. Features ■ Low collector-emitter saturation voltage VCEsat ■ High collector current capability IC and ICM ■ High collector current gain (

文件：106.93 Kbytes 页数：13 Pages

恩XP

40 V low VCEsat PNP transistor

DESCRIPTION PNP low VCEsat transistor in a SOT323 (SC-70) plastic package. FEATURES • Low collector-emitter saturation voltage • High current capability • Improved device reliability due to reduced heat generation • Enhanced performance over SOT23 1A standard packaged transistor. APPLICATIO

文件：67.75 Kbytes 页数：12 Pages

PHI

飞利浦

丝印：51t；Package：SOT323；40 V low VCEsat PNP transistor

FEATURES •Low collector-emitter saturation voltage •High current capability •Improved device reliability due to reduced heat generation •Enhanced performance over SOT23 1A standard packaged transistor. APPLICATIONS •General purpose switching and muting •LCD back lighting •Supply line swi

文件：482.97 Kbytes 页数：10 Pages

NEXPERIA

安世