40 V low VCEsat PNP transistor

DESCRIPTION PNP low VCEsat transistor in an SC-74 (SOT457) plastic package. FEATURES • Low collector-emitter saturation voltage • High current capability • Improved device reliability due to reduced heat generation. APPLICATIONS • General purpose switching and muting • LCD back-lighting •

文件：61.42 Kbytes 页数：8 Pages

PHI

飞利浦

40 V low VCEsat PNP transistor

恩XP

恩智浦

40 V low VCEsat PNP transistor

DESCRIPTION PNP low VCEsat transistor in a SOT54 plastic package. NPN complement: PBSS4140S. FEATURES • High power dissipation (830 mW) • Ultra low collector-emitter saturation voltage • 1 A continuous current • High current switching • Improved device reliability due to reduced heat gener

文件：60.67 Kbytes 页数：8 Pages

PHI

飞利浦

Silicon PNP transistor in a TO-92 Plastic Package

Descriptions Silicon PNP transistor in a TO-92 Plastic Package. Features High PC, low VCE(sat), high current switching Applications Medium power switching and muting, linear regulators, LCD back-lighting, supply line switching circuits

文件：764.33 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子

40 V low VCEsat PNP transistor

DESCRIPTION PNP low VCEsat transistor in a SOT23 plastic package. FEATURES • Low collector-emitter saturation voltage • High current capabilities • Improved device reliability due to reduced heat generation. APPLICATIONS • General purpose switching and muting • LCD back lighting • Supply

文件：68.51 Kbytes 页数：9 Pages

PHI

飞利浦