40 V, 1 A PNP low VCEsat BISS transistor

General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. Features ■ Low collector-emitter saturation voltage VCEsat ■ High collector current capability IC and ICM ■ High collector current gain (

文件：106.93 Kbytes 页数：13 Pages

恩XP

Silicon PNP transistor in a SOT-23 Plastic Package

Descriptions Silicon PNP transistor in a SOT-23 Plastic Package. Features Low VCE(sat), high current. Applications General purpose switching and muting, LCD back-lighting, supply line switching circuits.

文件：1.01144 Mbytes 页数：6 Pages

FOSHAN

蓝箭电子

丝印：2H；Package：SOT23；40 V, 1 A PNP low VCEsat BISS transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation

文件：221.68 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

40 V low VCEsat PNP transistor

DESCRIPTION PNP low VCEsat transistor in a SOT23 plastic package. FEATURES • Low collector-emitter saturation voltage • High current capabilities • Improved device reliability due to reduced heat generation. APPLICATIONS • General purpose switching and muting • LCD back lighting • Supply

文件：68.51 Kbytes 页数：9 Pages

PHI

飞利浦

Low VCEsat (BISS) transistors

文件：948.33 Kbytes 页数：12 Pages

PHI

飞利浦

40 V, 1 A PNP low VCEsat BISS transistor

文件：106.93 Kbytes 页数：13 Pages

PHI

飞利浦

40 V, 1 A PNP low VCEsat BISS transistor

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.\n NPN complement: PBSS4140T. • Low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High collector current gain (hFE) at high IC\n• High efficiency due to less heat generation\n• AEC-Q101 qualified;

Nexperia

安世

双极晶体管

BlueRocket

蓝箭电子

40 V, 1 A PNP low VCEsat transistor

PNP low VCEsat transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.\n NPN complement: PBSS4140T-Q • Low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High collector current gain (hFE) at high IC\n• High efficiency due to less heat generation\n• Qualified according to AEC-Q101 and recommended for use in automotive applications;

Nexperia

安世

Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 40V 1A TO236AB

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司