PBSS5140V

40 V low VCEsat PNP transistor

DESCRIPTION PNPlowVCEsattransistorinaSOT666plasticpackage.NPNcomplement:PBSS4140V. FEATURES •300mWtotalpowerdissipation •Verysmall1.6mm×1.2mm×0.55mmultrathinpackage •Improvedthermalbehaviourduetoflatleads •Selfalignmentduringsolderingduetostraight

PBSS5140V

Marking：25；Package：SOT666；40 V low VCEsat PNP transistor

FEATURES •300mWtotalpowerdissipation •Verysmall1.6mm×1.2mm×0.55mmultrathinpackage •Improvedthermalbehaviourduetoflatleads •Selfalignmentduringsolderingduetostraightleads •Lowcollector-emittersaturationvoltage •Highcurrentcapability APPLICATIONS •General

PBSS5140T

Low VCEsat (BISS) transistors

PBSS5140T_15

40 V, 1 A PNP low VCEsat BISS transistor

PBSS5140U_15

40 V low VCEsat PNP transistor

PBSS5140T,215

Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 40V 1A TO236AB

Nexperia USA Inc.

PBSS5140T/ZLR

Package：TO-236-3，SC-59，SOT-23-3；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 40V 1A TO236AB

Nexperia USA Inc.

PBSS5140U,115

Package：SC-70，SOT-323；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 40V 1A SOT323

Nexperia USA Inc.