丝印：25；Package：SOT666；40 V low VCEsat PNP transistor

FEATURES •300 mW total power dissipation •Very small 1.6 mm × 1.2 mm × 0.55 mm ultra thin package •Improved thermal behaviour due to flat leads •Self alignment during soldering due to straight leads •Low collector-emitter saturation voltage •High current capability APPLICATIONS •General

文件：466.93 Kbytes 页数：8 Pages

NEXPERIA

安世

40 V low VCEsat PNP transistor

DESCRIPTION PNP low VCE sat transistor in a SOT666 plastic package. NPN complement: PBSS4140V. FEATURES • 300 mW total power dissipation • Very small 1.6 mm × 1.2 mm × 0.55 mm ultra thin package • Improved thermal behaviour due to flat leads • Self alignment during soldering due to straight

文件：47 Kbytes 页数：8 Pages

PHI

飞利浦

40 V low VCEsat PNP transistor

DESCRIPTION PNP low VCE sat transistor in a SOT666 plastic package. NPN complement: PBSS4140V. FEATURES • 300 mW total power dissipation • Very small 1.6 mm × 1.2 mm × 0.55 mm ultra thin package • Improved thermal behaviour due to flat leads • Self alignment during soldering due to straight

文件：273.98 Kbytes 页数：7 Pages

恩XP

Low VCEsat (BISS) transistors

文件：948.33 Kbytes 页数：12 Pages

PHI

飞利浦

40 V, 1 A PNP low VCEsat BISS transistor

文件：106.93 Kbytes 页数：13 Pages

PHI

飞利浦

40 V low VCEsat PNP transistor

文件：295.03 Kbytes 页数：9 Pages

PHI

飞利浦

双极晶体管

BlueRocket

蓝箭电子

General purpose and low VCEsat bipolar transistors

Nexperia

安世

Package：TO-236-3，SC-59，SOT-23-3；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 40V 1A TO236AB

Nexperia USA Inc.

Package：SC-70，SOT-323；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 40V 1A SOT323

Nexperia USA Inc.