40 V low VCEsat PNP transistor

DESCRIPTION PNP low VCE sat transistor in a SOT666 plastic package. NPN complement: PBSS4140V. FEATURES • 300 mW total power dissipation • Very small 1.6 mm × 1.2 mm × 0.55 mm ultra thin package • Improved thermal behaviour due to flat leads • Self alignment during soldering due to straight

文件：47 Kbytes 页数：8 Pages

PHI

飞利浦

40 V low VCEsat PNP transistor

DESCRIPTION PNP low VCE sat transistor in a SOT666 plastic package. NPN complement: PBSS4140V. FEATURES • 300 mW total power dissipation • Very small 1.6 mm × 1.2 mm × 0.55 mm ultra thin package • Improved thermal behaviour due to flat leads • Self alignment during soldering due to straight

文件：273.98 Kbytes 页数：7 Pages

恩XP

丝印：25；Package：SOT666；40 V low VCEsat PNP transistor

FEATURES •300 mW total power dissipation •Very small 1.6 mm × 1.2 mm × 0.55 mm ultra thin package •Improved thermal behaviour due to flat leads •Self alignment during soldering due to straight leads •Low collector-emitter saturation voltage •High current capability APPLICATIONS •General

文件：466.93 Kbytes 页数：8 Pages

NEXPERIA

安世

40 V low VCEsat PNP transistor

DESCRIPTION\nPNP low VCE sat transistor in a SOT666 plastic package. NPN complement: PBSS4140V.FEATURES\n• 300 mW total power dissipation\n• Very small 1.6 mm × 1.2 mm × 0.55 mm ultra thin package\n• Improved thermal behaviour due to flat leads\n• Self alignment during soldering due to straight lead • 300 mW total power dissipation\n• Very small 1.6 mm × 1.2 mm × 0.55 mm ultra thin package\n• Improved thermal behaviour due to flat leads\n• Self alignment during soldering due to straight leads\n• Low collector-emitter saturation voltage\n• High current capability;

恩XP

恩智浦

40 V low VCEsat PNP transistor

PNP low VCE sat transistor in a SOT666 plastic package.\n NPN complement: PBSS4140V.

Nexperia

安世