丝印：W7；Package：SOT23；150 V, 1 A PNP high-voltage low VCEsat transistor

1. General description PNP high-voltage low VCEsat transistor in a SOT23 (TO-263AB) small Surface-Mounted Device (SMD) plastic package. NPN complement PBHV8115T 2. Features and benefits • High voltage • Low collector-emitter saturation voltage VCEsat • High collector current capability IC

文件：895.97 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor

General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBHV8115T. Features ■ High voltage ■ Low collector-emitter saturation voltage VCEsat ■ High collector curre

文件：124.39 Kbytes 页数：12 Pages

恩XP

丝印：W7；Package：SOT23；150 V, 1 A PNP high-voltage low VCEsat transistor

1. General description PNP high-voltage low VCEsat transistor in a SOT23 (TO-263AB) small Surface-Mounted Device (SMD) plastic package. NPN complement PBHV8115T-Q. 2. Features and benefits • High voltage • Low collector-emitter saturation voltage VCEsat • High collector current capability

文件：271.62 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

150 V, 1 A PNP high-voltage low VCEsat transistor

1. General description PNP high-voltage low VCEsat transistor in a SOT23 (TO-263AB) small Surface-Mounted Device (SMD) plastic package. NPN complement PBHV8115T 2. Features and benefits • High voltage • Low collector-emitter saturation voltage VCEsat • High collector current capability IC

文件：895.97 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：FC；Package：TO-236AB；150 V, 1 A PNP high-voltage low VCEsat BISS transistor

文件：419.71 Kbytes 页数：15 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor

PNP high-voltage low VCEsat Breakthrough Small Signal (BISS) transistor in a SOT23 (TO-263AB) small Surface-Mounted Device (SMD) plastic package. NPN complement PBHV8115T. • High voltage\n• Low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High collector current gain (hFE) at high IC\n• AEC-Q101 qualified;

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安世

150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor

恩XP

恩智浦

Single bipolar transistors

Nexperia

安世

Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 150V 1A TO236AB

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 150V 1A TO236AB

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司