NXH80B120H2Q0

Q0 - Dual Boost Power Module

NXH80B120H2Q0SG

Power Integrated Module (PIM), SiC Diode + IGBT, 1200 V, 40 A; • IGBT Specifications: VCE(SAT) = 2.2 V, ESW = 2180 \u0002uJ\n• Fast IGBT with low VCE(SAT) for high efficiency\n• 25 A / 1600 V Bypass and Anti−parallel Diodes\n• Low VF bypass diodes for excellent efficiency in bypass mode\n• SiC Rectifier Specification: VF = 1.4 V\n• SiC Diode for high speed switching\n• Solderable Pins\n• Easy mounting\n• Dual Boost 40 A / 1200 V IGBT + SiC Rectifier Hybrid Module\n• Thermistor\n;

The NXH80B120L2Q0SG is a power module containing a dual boost stage consisting of two 40A/1200V IGBTs, two 15A/1200V SiC diodes,and two 25A/1600V anti-parallel diodes for the IGBTs. Two additional 25A/1600V bypass rectifiers used for inrush current limit are included. An on-board thermistor is included.

NXH80B120H2Q0SG

Dual Boost Power Module

NXH80B120H2Q0SG

丝印：NXH80B120H2Q0SG；Package：Q0BOOST；Q0 - Dual Boost Power Module

NXH80B120H2Q0SNG

丝印：NXH80B120H2Q0SNG；Package：Q0BOOST；Q0 - Dual Boost Power Module

NXH80B120H2Q0SG

包装：托盘 类别：分立半导体产品 晶体管 - IGBT - 模块 描述：PIM 1200V, 40A DUAL BOOST

NXH80B120H2Q0SNG

Package：模块；包装：托盘 类别：分立半导体产品 晶体管 - IGBT - 模块 描述：PIM POWER MODULE