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NVHL040N120SC1	文件：314.98 Kbytes Page：7 Pages	Silicon Carbide (SiC) MOSFET – 40 mohm, 1200V, M1, TO-247-3L Features •Typ.RDS(on)=40m •UltraLowGateCharge(typ.QG(tot)=106nC) •LowEffectiveOutputCapacitance(typ.Coss=140pF) •100UILTested •AEC−Q101QualifiedandPPAPCapable •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinte	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
NVHL040N120SC1	文件：246.79 Kbytes Page：7 Pages	MOSFET - SiC Power, Single N-Channel 1200 V, 40 m, 60 A	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
NVHL040N120SC1_V01	文件：314.98 Kbytes Page：7 Pages	Silicon Carbide (SiC) MOSFET – 40 mohm, 1200V, M1, TO-247-3L Features •Typ.RDS(on)=40m •UltraLowGateCharge(typ.QG(tot)=106nC) •LowEffectiveOutputCapacitance(typ.Coss=140pF) •100UILTested •AEC−Q101QualifiedandPPAPCapable •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinte	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
NTBG040N120SC1	文件：249.91 Kbytes Page：8 Pages	MOSFET??SiCPower,SingleN-Channel,D2PAK-7L1200V,40m,60A	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
NTBG040N120SC1	文件：333.69 Kbytes Page：8 Pages	SiliconCarbide(SiC)MOSFET–40mohm,1200V,M1,D2PAK-7 Features •Typ.RDS(on)=40m •UltraLowGateCharge(Typ.QG(tot)=106nC) •LowEffectiveOutputCapacitance(Typ.Coss=139pF) •100AvalancheTested •TJ=175°C •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) Typ	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
NTBG040N120SC1	文件：330.93 Kbytes Page：8 Pages	SiliconCarbide(SiC)MOSFET–EliteSiC,40mohm,1200V,M1,D2PAK-7 Features •Typ.RDS(on)=40m •UltraLowGateCharge(Typ.QG(tot)=106nC) •LowEffectiveOutputCapacitance(Typ.Coss=139pF) •100AvalancheTested •TJ=175°C •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) Typ	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
NTC040N120SC1	文件：179.34 Kbytes Page：8 Pages	SiliconCarbide(SiC)MOSFET–40mohm,1200V,M1,BareDie Description SiliconCarbide(SiC)MOSFETusesacompletelynewtechnology thatprovidesuperiorswitchingperformanceandhigherreliability comparedtoSilicon.Inaddition,thelowONresistanceandcompact chipsizeensurelowcapacitanceandgatecharge.Consequently, systembenefitsincl	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
NTC040N120SC1	文件：223.46 Kbytes Page：8 Pages	MOSFET??N?륝hannel,SiliconCarbide1200V,40m	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
NTHL040N120SC1	文件：312.59 Kbytes Page：7 Pages	SiliconCarbide(SiC)MOSFET–40mohm,1200V,M1,TO-247-3L Features •Typ.RDS(on)=40m •UltraLowGateCharge(typ.QG(tot)=106nC) •LowEffectiveOutputCapacitance(typ.Coss=140pF) •100UILTested •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) TypicalApplications •	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
NTHL040N120SC1	文件：242.9 Kbytes Page：7 Pages	MOSFET-SiCPower,SingleN-Channel1200V,40m,60A	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
NTHL040N120SC1	文件：313.53 Kbytes Page：7 Pages	SiliconCarbide(SiC)MOSFET–EliteSiC,40mohm,1200V,M1,TO-247-3L Features •Typ.RDS(on)=40m •UltraLowGateCharge(typ.QG(tot)=106nC) •LowEffectiveOutputCapacitance(typ.Coss=140pF) •100UILTested •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) TypicalApplications •	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
NVBG040N120SC1	文件：249.6 Kbytes Page：8 Pages	MOSFET??SiCPower,SingleN-Channel,D2PAK-7L	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
NVBG040N120SC1	文件：307 Kbytes Page：8 Pages	SiliconCarbide(SiC)MOSFET–40mohm,1200V,M1,D2PAK-7L Features •Typ.RDS(on)=40m •UltraLowGateCharge(Typ.QG(tot)=106nC) •LowEffectiveOutputCapacitance(Typ.Coss=139pF) •100AvalancheTested •AEC−Q101QualifiedandPPAPCapable •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondleve	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
NVC040N120SC1	文件：223.5 Kbytes Page：8 Pages	MOSFET??N?륝hannel,SiliconCarbide1200V,40m Description SiliconCarbide(SiC)MOSFETusesacompletelynewtechnology thatprovidesuperiorswitchingperformanceandhigherreliability comparedtoSilicon.Inaddition,thelowONresistanceandcompact chipsizeensurelowcapacitanceandgatecharge.Consequently, systembenefitsincl	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市金启宁科技有限公司	NVHL040N120SC1	ON	2140+	TO-247-3	345		询价
深圳市宇烁芯半导体科技有限公司	NVHL040N120SC1	ON	23+	TO-247-3LD	100000	全新原装	询价
中天科工半导体（深圳）有限公司	NVHL040N120SC1	onsemi	23+	TO-247-3	30000	晶体管-分立半导体产品-原装正品	询价
深圳市高捷芯城科技有限公司	NVHL040N120SC1	onsemi(安森美)	23+	TO-247	8110	支持大陆交货,美金交易。原装现货库存。	询价
艾睿国际（香港）有限公司	NVHL040N120SC1	ON(安森美)	2112+	-	115000	450个/管一级代理专营品牌!原装正品,优势现货,长期	询价
深圳市达恩科技有限公司	NVHL040N120SC1	ON	21+	NA	3000	进口原装假一罚十现货	询价
深圳市恒意法电子有限公司	NVHL040N120SC1	onsemi	21+	TO-252-3,DPak(2 引线 + 接片	21000	专业分立半导体,原装渠道正品现货	询价
深圳市祥瑞智科技有限公司	NVHL040N120SC1	ON	22+	TO-247	4500	原厂原装,价格优势!13246658303	询价
深圳市瑞智芯科技有限公司	NVHL040N120SC1	onsemi	21+	n/a	392	原装正品订货,请确认	询价
深圳市盈盛科创科技有限公司	NVHL040N120SC1	ON	21+	NA	3000	进口原装假一罚十现货	询价

更多NVHL040N120SC1供应商更新时间2024-4-29 17:08:00

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