丝印：NVHL040N65S3；Package：TO-247G03；MOSFET ??Power, N-Channel, SUPERFET III, Automotive, Easy-Drive

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MOSFET – Power, N-Channel, SUPERFET® III,Automotive, Easy-Drive 650 V, 65 A, 40 mΩ

SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switc • Best in Class body diode\n• High System Reliability\n• Internal Rg\n• Ease of use for fast design-in\n• Lower RDS (ON) / Same Packages\n• Low EMI\n• Lower FOM (RDS (ON) max. X Qg typ. & RDS (ON) max X EOSS\n• High Power Density\n• Internal Zener / 650V BVdss;

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丝印：NVHL040N65S3F；Package：TO-247；MOSFET ??Power, N-Channel, SUPERFET III, FRFET650 V, 65 A, 40 m

Description SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, pro

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丝印：NVHL040N65S3HF；Package：TO-247；MOSFET - Power, N-Channel, SUPERFET III, FRFET 650 V, 65 A, 40 m

Description SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, pro

文件：330.24 Kbytes 页数：11 Pages

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Single N-Channel Power MOSFET SUPERFET ® III, FRFET®, 650 V , 65 A, 40 mΩ, TO-247

SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switc • 700 V @ TJ = 150°C\n• Higher system reliability at low temperature operation\n• Ultra Low Gate Charge (Typ. Qg = 158 nC)\n• Lower switching loss\n• Low Effective Output Capacitance (Typ. Coss(eff.) = 1366 pF)\n• Lower switching loss\n• AEC−Q101 Qualified and PPAP Capable\n• AEC−Q101 Qualified and ;

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Single N-Channel Power MOSFET SUPERFET ® III, FRFET®, 650 V , 65 A, 40 mΩ, TO-247 fast recovery

SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switc • Best in Class body diode\n• High System Reliability\n• Internal Rg\n• Ease of use for fast design-in\n• Lower RDS(on) / Same Packages\n• Low EMI\n• Lower FOM (RDS(ON) max X Qg typ & RDS (ON) max X EOSS\n• High Power Density\n• Internal Zener / 650V BVdss\n• Low switching noise;

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