Silicon Carbide (SiC) MOSFET – 80 mohm, 1200V, M1, TO-247-3L

Features • Typ. RDS(on) = 80 m • Ultra Low Gate Charge (typ. QG(tot) = 56 nC) • Low Effective Output Capacitance (typ. Coss = 80 pF) • 100 UIL Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interc

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MOSFET - SiC Power, Single N-Channel

文件：377.47 Kbytes 页数：7 Pages

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安森美半导体

碳化硅 MOSFET，N 沟道，1200 V，80 mΩ，TO247−3L

Silicon Carbide (SiC) MOSFET uses a completely new technology thatprovidesuperiorswitching performanceandhigherreliability compared to Silicon. In addition, the low ON resistance and compact chipsizeensurelowcapacitanceandgatecharge.Consequently, system benefits include highest efficiency, faster op • 1200V rated\n• Max RDS(on) = 110mΩ at Vgs = 20V, Id = 20A\n• High Speed Switching and Low Capacitance\n• 100% UIL Tested\n• Qualified for Automotive According to AEC−Q101\n• Devices are Pb−Free and are RoHS Compliant;

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安森美半导体

Silicon Carbide (SiC) MOSFET – 80 mohm, 1200V, M1, TO-247-3L

Features • Typ. RDS(on) = 80 m • Ultra Low Gate Charge (typ. QG(tot) = 56 nC) • Low Effective Output Capacitance (typ. Coss = 80 pF) • 100 UIL Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interc

文件：363.6 Kbytes 页数：7 Pages

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安森美半导体

丝印：NVHL080N120SC1A；Package：TO-247；MOSFET - SiC Power, Single N-Channel

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安森美半导体

Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 80mohm, 1200 V, M1, TO247−3L

Silicon Carbide (SiC) MOSFET uses a completely new technology thatprovidesuperiorswitching performanceandhigherreliability compared to Silicon. In addition, the low ON resistance and compact chipsizeensurelowcapacitanceandgatecharge.Consequently, system benefits include highest efficiency, faster op • High Speed Switching and Low Capacitance\n• Coss = 80pF\n• 1200V rated\n• Max RDS(on) = 110mΩ at Vgs = 20V, Id = 20A\n• 100% UIL Tested\n• Qualified for Automotive According to AEC−Q101;

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安森美半导体