NVD5C464N

MOSFET ??Power, Single N-Channel 40 V, 5.8 m, 59 A

Features •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompliant

NVD5C464N

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=59A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=5.8mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

NVD5C464N

单 N 沟道，功率 MOSFET，40V，59A，5.8mΩ; • Low on-resistance\n• Minimal conduction losses\n• High current capability\n• Robust load performance\n• 100% avalanche energy tested\n• Voltage overstress safeguard\n• AEC−Q101 Qualified and PPAP Capable\n• RoHS Compliant\n;

Automotive Power MOSFET. 40V, 59A, 5.7 mOhm, Single N-Channel, DPAK. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.

NVD5C464NL

Power MOSFET 40 V, 5.2 m, 64 A, Single N?묬hannel

Features •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompliant

NVD5C464NLT4G

Power MOSFET 40 V, 5.2 m, 64 A, Single N?묬hannel

Features •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompliant

NVD5C464NT4G

MOSFET ??Power, Single N-Channel 40 V, 5.8 m, 59 A

Features •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompliant

NVD5C464NT4G

N-channel Advanced Mode Power MOSFET

Features VDS=40V,ID=150A RDS(ON)

NVD5C464NLT4G

包装：卷带（TR） 类别：分立半导体产品 晶体管 - FET，MOSFET - 单个 描述：T6 40V DPAK EXPANSION AND