Power MOSFET 40 V, 5.2 m, 64 A, Single N?묬hannel

Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

文件：241.8 Kbytes 页数：7 Pages

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安森美半导体

Power MOSFET 40 V, 5.2 m, 64 A, Single N?묬hannel

Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

文件：241.8 Kbytes 页数：7 Pages

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安森美半导体

Single N-Channel Power MOSFET, 40V, 64A, 5.2mΩ Logic Level

Automotive Power MOSFET in a DPAK package designed for compact and efficient designs and including high thermal performance. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications. • Low on-resistance\n• High current capability\n• 100% avalanche energy tested\n• AEC−Q101 Qualified and PPAP Capable\n• RoHS Compliant\n;

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安森美半导体

包装：卷带（TR） 类别：分立半导体产品 晶体管 - FET，MOSFET - 单个 描述：T6 40V DPAK EXPANSION AND

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安森美半导体