丝印：014N06CL；Package：LFPAK4；Power MOSFET 60 V, 15 m, 37 A, Single N?묬hannel

文件：327.54 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET – Power, Single N-Channel 60 V, 15 m, 37 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK4 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：345.57 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET – Power, Single N-Channel 60 V, 15 m, 37 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK4 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：345.57 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

OptiMOSTM Power-Transistor

文件：556.16 Kbytes 页数：10 Pages

Infineon

英飞凌

New OptiMOS??40V and 60V

文件：1.02174 Mbytes 页数：2 Pages

Infineon

英飞凌

MOSFET OptiMOSTM Power-Transistor, 60 V

文件：982.36 Kbytes 页数：11 Pages

Infineon

英飞凌