MOSFET ??Power, Single, N-Channel 40 V, 1.15 m, 252 A

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丝印：1D3N04C；Package：LFPAK；MOSFET ??Power, Single, N-Channel 40 V, 1.15 m, 252 A

文件：347.14 Kbytes 页数：7 Pages

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安森美半导体

功率 MOSFET，单 N 沟道，40 V，1.15mΩ，252 A

Industrial Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance.

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安森美半导体

MOSFET - Power, Single N-Channel, Source Down DualCool 33, WDFN9 40 V, 1.3 m, 207 A

Features • Excellent Thermal Conduction by Advanced Source−Down Center Gate Dual−Cooling Package Technology (3.3x3.3mm) • Low RDS(on) to Minimize Conduction Loss • Low QRR with Soft Recovery to Minimize ERR Loss and Voltage Spike • Low QG and Capacitance to Minimize Driving and Switching Los

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安森美半导体

MOSFET - Power, Single N-Channel, Source Down DualCool 33, WDFN9 40 V, 1.3 m, 207 A

Features • Excellent Thermal Conduction by Advanced Source−Down Center Gate Dual−Cooling Package Technology (3.3x3.3mm) • Low RDS(on) to Minimize Conduction Loss • Low QRR with Soft Recovery to Minimize ERR Loss and Voltage Spike • Low QG and Capacitance to Minimize Driving and Switching Los

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安森美半导体

MOSFET - Power, Single N-Channel, Source Down, WDFN9 40 V, 1.3 m, 207 A

Features • Advanced Source−Down Package Technology (3.3x3.3mm) with Excellent Thermal Conduction • Low RDS(on) to Minimize Conduction Loss • Low QRR with Soft Recovery to Minimize ERR Loss and Voltage Spike • Low QG and Capacitance to Minimize Driving and Switching Losses • These Devices ar

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安森美半导体