NTH4L067N65S3H中文资料Power MOSFET, N-Channel, SUPERFET® III, FAST, 650 V, 40 A, 67 mΩ, TO-247 4lead数据手册ONSEMI规格书

描述 Description

SUPERFET III MOSFET is ON Semiconductor’s brand-new high
voltage super-junction (SJ) MOSFET family that is utilizing charge
balance technology for outstanding low on-resistance and lower gate
charge performance. This advanced technology is tailored to minimize
conduction loss, provides superior switching performance, and
withstand extreme dv/dt rate.
Consequently, SUPERFET III FAST MOSFET series helps
minimize various power systems and improve system efficiency.

特性 Features

• 700 V @ TJ = 150°C
• Higher system reliability at low temperature operation
• Ultra Low Gate Charge (Typ. Qg = 80 nC)
• Low switching loss
• Low Effective Output Capacitance (Typ. Coss(eff.) = 691 pF)
• Low switching loss
• Fast switching performance with robust body diode
• Low switching loss and higher system reliability
• Kelvin Source configuration
• Lower switching loss and lower Vgs oscillation
• 100% Avalanche Tested
• RoHS Compliant
• Typ. RDS(on) = 55 m Ω
• Internal Gate Resistance: 0.6 Ω

应用 Application

• Telecommunication
• Cloud system
• Industrial
• Telecom power
• Server power
• Solar / UPS
• EV charger