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NTE198

Silicon NPN Transistor High Voltage Power Transistor

Description: TheNTE198isahighvoltagesiliconNPNpowertransistorinaTO220typepackagedesignedforuseasalineoperatedaudiooutputamplifier,switchmodepowersupplydriver,andotherswitchmodeapplications.

NTE

NTE Electronics, Inc

198

MINIATUREFUSES-5x20mm

LittelfuseLittelfuse Inc.

力特力特公司

198PHR

AluminumElectrolyticCapacitors,PowerHighRippleCurrentSnap-In

VishayVishay Siliconix

威世科技

198PHR-SI

AluminumElectrolyticCapacitors,PowerHighRippleCurrentSnap-In

FEATURES •Usefullife:15000hat+85°C •Veryhighripplecurrentcapability •Highreliability •LowESR •Polarizedaluminumelectrolyticcapacitors, non-solidelectrolyte •Largetypes,miniaturizeddimensions,cylindrical aluminumcase,insulatedwithabluesleeve •Keyedpolarit

VishayVishay Siliconix

威世科技

198PHR-SI

AluminumElectrolyticCapacitors

VishayVishay Siliconix

威世科技

198PHR-SI

AluminumCapacitorsPowerHighRippleCurrentSnap-In

VishayVishay Siliconix

威世科技

A198S

FastAsymmetricThyristors

FastAsymmetricThyristors

ETC1List of Unclassifed Manufacturers

未分类制造商

AB198

AssemblyandHandlingInformation

LUMILEDSLUMILEDS

LUMILEDS

ADP198

LogicControlled,1A,High-SideLoad

GENERALDESCRIPTION TheADP198isahigh-sideloadswitchdesignedforoperationbetween1.65Vand6.5Vthatisprotectedagainstreversecurrentflowfromoutputtoinput.Aloadswitchprovidespowerdomainisolation,therebyhelpingtokeepsubsystemsisolatedandpoweredindependentlyande

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

ADP198CP-EVALZ

LogicControlled,1A,High-SideLoad

GENERALDESCRIPTION TheADP198isahigh-sideloadswitchdesignedforoperationbetween1.65Vand6.5Vthatisprotectedagainstreversecurrentflowfromoutputtoinput.Aloadswitchprovidespowerdomainisolation,therebyhelpingtokeepsubsystemsisolatedandpoweredindependentlyande

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

ADP198CP-EVALZ

EvaluationKit

INTRODUCTION ThiskitcontainseverythingneededforrapidprototypingwiththeSA310KR3-phasedriver.Withamultitude ofcircuitoptions,theEK76offersversatilitywhenincomestoconnectinginputs,measuringoutputs, andconditioningsignalstothespecificapplicationenvironment.High-

Apex

Apex Microtechnology Corporation

BB198

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

BB198

VariablecapacitancediodeforVCOandVCXOSmallplasticSMDpackage

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

BCR198

PNPSiliconDigitalTransistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

BCR198

PNPSiliconDigitalTransistor

PNPSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit,drivercircuit •Builtinbiasresistor(R1=47kΩ,R2=47kΩ) •For6-PINpackages:two(galvanic)internalisolatedtransistorswithgoodmatchinginonepackage

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

BCR198

PNPSiliconDigitalTransistor(Switchingcircuit,inverter,interfacecircuit,drivercircuit)

PNPSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit,drivercircuit •Builtinbiasresistor(R1=47kΩ,R2=47kΩ)

SIEMENS

Siemens Ltd

BCR198

PNPSiliconDigitalTransistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

BCR198F

PNPSiliconDigitalTransistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

BCR198F

PNPSiliconDigitalTransistor

PNPSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit,drivercircuit •Builtinbiasresistor(R1=47kΩ,R2=47kΩ) •For6-PINpackages:two(galvanic)internalisolatedtransistorswithgoodmatchinginonepackage

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

BCR198S

PNPSiliconDigitalTransistorArray

PNPSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit,drivercircuit •Builtinbiasresistor(R1=47kΩ,R2=47kΩ) •For6-PINpackages:two(galvanic)internalisolatedtransistorswithgoodmatchinginonepackage

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

详细参数

  • 型号:

    NTE198

  • 制造商:

    NTE Electronics

  • 功能描述:

    TRANSISTOR NPN SILICON 500V IC-1A TO-220 CASE HIGH VOLTAGE AUDIO AMP

  • 功能描述:

    T-NPN- SI-HIV AF- SW

  • 功能描述:

    TRANSISTOR, BIPOLAR, NPN, 400V, 30A, TO-220-3; Transistor

  • Polarity:

    NPN; Collector Emitter Voltage

  • V(br)ceo:

    400V; Power Dissipation

  • Pd:

    40W; DC Collector

  • Current:

    1A; DC Current Gain

  • hFE:

    30; Operating Temperature

  • Min:

    -65C ;RoHS

  • Compliant:

    Yes

  • 功能描述:

    Trans GP BJT NPN 400V 1A 3-Pin(3+Tab) TO-220

供应商型号品牌批号封装库存备注价格
33
全新原装 货期两周
询价
2022+
29
全新原装 货期两周
询价
NTE
23+
65480
询价
NTE
24+25+/26+27+
车规-元器件
43788
一一有问必回一特殊渠道一有长期订货一备货HK仓库
询价
NTE Electronics
20+
n/a
951
原装正品订货,请确认
询价
NTE
D8
Rohsv
5000
全新原装现货 样品可售
询价
NTE
Rohsv
39235
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
NTE
2000
1
公司优势库存 热卖中!!
询价
NTE
22+
NA
500000
万三科技,秉承原装,购芯无忧
询价
6000
面议
19
DIP/SMD
询价
更多NTE198供应商 更新时间2024-5-1 16:06:00