N-Channel 60 V (D-S) MOSFET

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VBSEMI

微碧半导体

单 N 沟道，功率 MOSFET，60V，9A，150mΩ

Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. • RoHS Compliant;

ONSEMI

安森美半导体

单 N 沟道逻辑电平功率 MOSFET 60V，12A，104mΩ

Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. • Lower RDS(on)\n• Lower VDS(on)\n• Tighter VSD Specification\n• Lower Diode Reverse Recovery Time\n• Lower Reverse Recovery Stored Charge\n• RoHS Compliant;

ONSEMI

安森美半导体

单 N 沟道，逻辑电平，功率 MOSFET，60V，9A，170mΩ

Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits.

ONSEMI

安森美半导体