isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 23A@ TC=25℃ ·Drain Source Voltage -VDSS= 25V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 45mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：259.709 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 23A@ TC=25℃ ·Drain Source Voltage -VDSS= 25V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 45mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：278.28 Kbytes 页数：2 Pages

ISC

无锡固电

23 Amps, 25 Volts, N-Channel DPAK

文件：64.03 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

23 Amps, 25 Volts, N-Channel DPAK

文件：64.03 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

N-Channel 30-V (D-S) MOSFET

文件：959.98 Kbytes 页数：8 Pages

VBSEMI

微碧半导体

23 Amps, 25 Volts, N-Channel DPAK

文件：64.03 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

23 Amps, 25 Volts, N-Channel DPAK

文件：64.03 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

23 Amps, 25 Volts, N-Channel DPAK

文件：64.03 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

23 Amps, 25 Volts, N-Channel DPAK

文件：64.03 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Power MOSFET 25V 23A 45 mOhm Single N-Channel DPAK

23 Amp, 25 Volt MOSFET N-Channel DPAK • Planar HD3e Process for Fast Switching Performance\n• Low RDS(on) to minimize Conduction Loss\n• Low Ciss to Minimize Driver Loss\n• Low Gate Charge\n• Optimized for High Side Switching Requirements in High Efficiency DC-DC Converters\n• Pb-Free Packages are Available;

ONSEMI

安森美半导体