NTB60N06

MOSFET – Power, N-Channel, D2PAK 60 V, 60 A

Designedforlowvoltage,highspeedswitchingapplicationsin powersupplies,convertersandpowermotorcontrolsandbridge circuits. Features •AEC−Q101QualifiedandPPAPCapable−NVB60N06 •TheseDevicesarePb−FreeandareRoHSCompliant TypicalApplications •PowerSupplies •C

NTB60N06

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=60A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=14mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

NTB60N06

Single N-Channel Power MOSFET 60V 60A 14 mΩ; • AECQ101 Qualified and PPAP CapableNVB60N06\n• RoHS Compliant\n;

Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits.

NTB60N06

60 V, 60 A, N-Channel TO-220 and D2PAK

NTB60N06L

功率 MOSFET 60V 60A 16 mΩ 单 N 沟道 D2PAK 逻辑电平; • Pb Free is available\n\n;

适用于电源、转换器、功率电机控制和桥式电路中的低压高速开关应用。\n\n

NTB60N06L

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=60A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=14mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

NTB60N06T4G

MOSFET – Power, N-Channel, D2PAK 60 V, 60 A

Designedforlowvoltage,highspeedswitchingapplicationsin powersupplies,convertersandpowermotorcontrolsandbridge circuits. Features •AEC−Q101QualifiedandPPAPCapable−NVB60N06 •TheseDevicesarePb−FreeandareRoHSCompliant TypicalApplications •PowerSupplies •C

NTB60N06G

60 V, 60 A, N-Channel TO-220 and D2PAK

NTB60N06G

Marking：D2PAK；Package：TO-263；N-Channel 60-V (D-S) MOSFET

NTB60N06L

Power MOSFET 60 Amps, 60 Volts, Logic Level N?묬hannel TO??20 and D2PAK