Schottky Barrier Diode

These Schottky barrier diodes are optimized for low forward voltage drop and low leakage current. The DSN2 (Dual Silicon No−lead) package is a chip level package using solderable metal contacts under the package similar to DFN style packages. The DSN style package enables 100% utilization

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Schottky Barrier Diode

Schottky barrier diodes are optimized for very low forward voltage drop and low leakage current and are used in a wide range of dc−dc converter, clamping and protection applications in portable devices. NSR02L40MX2W in a X2DFNW2 (0402) miniature package enables designers to meet the challengin

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安森美半导体

Schottky Barrier Diode

Schottky barrier diodes are optimized for very low forward voltage drop and low leakage current and are used in a wide range of dc−dc converter, clamping and protection applications in portable devices. NSR02L40MX2W in a X2DFNW2 (0402) miniature package enables designers to meet the challengin

文件：215.73 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Schottky Barrier Diodes

These Schottky barrier diodes are designed for high current, handling capability, and low forward voltage performance. Features • Low Forward Voltage − 0.24 Volts (Typ) @ IF = 10 mAdc • High Current Capability • ESD Rating: ♦ Human Body Model: CLASS 3B ♦ Machine Model: C • NSV Prefix for A

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Schottky Barrier Diodes

These Schottky barrier diodes are designed for high current, handling capability, and low forward voltage performance. Features • Low Forward Voltage − 0.24 Volts (Typ) @ IF = 10 mAdc • High Current Capability • ESD Rating: ♦ Human Body Model: CLASS 3B ♦ Machine Model: C • NSV Prefix for A

文件：173.42 Kbytes 页数：4 Pages

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安森美半导体

Schottky Barrier Diode

These Schottky barrier diodes are designed for high current, handling capability, and low forward voltage performance. Features • Low Forward Voltage − 0.35 V (Typ) @ IF = 10 mAdc • High Current Capability • These are Pb−Free Devices

文件：152.27 Kbytes 页数：4 Pages

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安森美半导体

Schottky Barrier Diode

These Schottky barrier diodes are designed for high current, handling capability, and low forward voltage performance. Features • Low Forward Voltage − 0.35 V (Typ) @ IF = 10 mAdc • High Current Capability • These are Pb−Free Devices

文件：152.27 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

Schottky Barrier Diode

These Schottky barrier diodes are designed for high current, handling capability, and low forward voltage performance. Features • Low Forward Voltage − 0.35 V (Typ) @ IF = 10 mAdc • High Current Capability • These are Pb−Free Devices

文件：152.27 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

Schottky Barrier Diode

These Schottky barrier diodes are designed for high current, handling capability, and low forward voltage performance. Features • Low Forward Voltage − 0.35 V (Typ) @ IF = 10 mAdc • High Current Capability • These are Pb−Free Devices

文件：152.27 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

Schottky Barrier Diode

These Schottky barrier diodes are designed for high current, handling capability, and low forward voltage performance. Features • Low Forward Voltage − 0.35 V (Typ) @ IF = 10 mAdc • High Current Capability • These are Pb−Free Devices

文件：152.27 Kbytes 页数：4 Pages

ONSEMI

安森美半导体