Schottky Barrier Diode

These Schottky barrier diodes are optimized for low forward voltage drop and low leakage current. Features • Very Low Forward Voltage Drop − 350 mV @ 1 mA • Low Reverse Current − 0.2 A @ 10 V • 100 mA of Continuous Forward Current • ESD Rating − Human Body Model: Class 3B ESD Rating − Mach

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Schottky Barrier Diode

These Schottky barrier diodes are optimized for low forward voltage drop and low leakage current. Features • Very Low Forward Voltage Drop − 350 mV @ 1 mA • Low Reverse Current − 0.2 A @ 10 V • 100 mA of Continuous Forward Current • ESD Rating − Human Body Model: Class 3B ESD Rating − Mach

文件：176.77 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Schottky Barrier Diode

These Schottky barrier diodes are optimized for low forward voltage drop and low leakage current. Features • Very Low Forward Voltage Drop − 350 mV @ 1 mA • Low Reverse Current − 0.2 A @ 10 V • 100 mA of Continuous Forward Current • ESD Rating − Human Body Model: Class 3B ESD Rating − Mach

文件：176.77 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Schottky Barrier Diode

These Schottky barrier diodes are optimized for low forward voltage drop and low leakage current. The DSN2 (Dual Silicon No−lead) package is a chip level package using solderable metal contacts under the package similar to DFN style packages. The DSN style package enables 100% utilization

文件：168.83 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Schottky Barrier Diode

These Schottky barrier diodes are optimized for low forward voltage drop and low leakage current. The DSN2 (Dual Silicon No−lead) package is a chip level package using solderable metal contacts under the package similar to DFN style packages. The DSN style package enables 100% utilization

文件：168.83 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

丝印：F；Package：SOD723；Schottky barrier diode

Features - Ultra small mold type. - Low VF - High reliability

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台舟电子

Schottky Barrier Diode

These Schottky barrier diodes are designed for high−speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand−held and portable applications where space is limited. Featu

文件：248.75 Kbytes 页数：5 Pages

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安森美半导体

Schottky Barrier Diode

These Schottky barrier diodes are designed for high−speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand−held and portable applications where space is limited. Featu

文件：248.75 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Schottky Barrier Diode

These Schottky barrier diodes are designed for high−speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand−held and portable applications where space is limited. Featu

文件：248.75 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Schottky Barrier Diode

Schottky barrier diodes are optimized for very low forward voltage drop and low leakage current and are used in a wide range of dc−dc converter, clamping and protection applications in portable devices. NSR0240H in a SOD−323 miniature package enables designers to meet the challenging task of a

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安森美半导体