Schottky Barrier Diode

These Schottky barrier diodes are optimized for low forward voltage drop and low leakage current. Features • Very Low Forward Voltage Drop − 350 mV @ 1 mA • Low Reverse Current − 0.2 A @ 10 V • 100 mA of Continuous Forward Current • ESD Rating − Human Body Model: Class 3B ESD Rating − Mach

文件：176.77 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Schottky Barrier Diode

文件：46.83 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

Schottky Barrier Diode

These Schottky barrier diodes are optimized for low forward voltage drop and low leakage current. Features • Very Low Forward Voltage Drop − 350 mV @ 1 mA • Low Reverse Current − 0.2 A @ 10 V • 100 mA of Continuous Forward Current • ESD Rating − Human Body Model: Class 3B ESD Rating − Mach

文件：176.77 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Schottky Barrier Diode

These Schottky barrier diodes are optimized for low forward voltage drop and low leakage current. Features • Very Low Forward Voltage Drop − 350 mV @ 1 mA • Low Reverse Current − 0.2 A @ 10 V • 100 mA of Continuous Forward Current • ESD Rating − Human Body Model: Class 3B ESD Rating − Mach

文件：176.77 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Schottky Barrier Diode

文件：50.58 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

Schottky Barrier Diode

文件：46.83 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

30 V，100 mA 低 IR 肖特基二极管

This Schottky barrier diode is optimized for low leakage current applications.It is packaged in an ultra small x3DFN2 package that enables designers to meet the challenging task of achieving higher efficiency and meeting reduced space requirements. • Very Low Forward Voltage Drop - 350 mV @ 1 mA\n• Higher Efficiency\n• Low Reverse Current - 0.2 uA @ 10 V\n• Higher Efficiency\n• ESD Rating - Human Body Model: Class 3BESD Rating - Machine Model: Class C\n• ESD Robust\n• Pb and Halide Free Device\n• Enviromentally Safe\n• 100 mA of Continuous For;

ONSEMI

安森美半导体

Package：0201（0603 公制）；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 30V 100MA 2X3DFN

ONSEMI

安森美半导体