首页 >NP36P06KDG>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
NP36P06KDG | MOS FIELD EFFECT TRANSISTOR DESCRIPTION TheNP36P06KDGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)1=29.5mΩMAX.(VGS=−10V,ID=−18A) RDS(on)2=37.5mΩMAX.(VGS=−4.5V,ID=−18A) •Lowinputcapacitance | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | |
NP36P06KDG | -60V – -36A – P-channel Power MOS FET Application : Automotive Description ThisproductisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features Superlowon-stateresistance:RDS(on)=29.5mMax.(VGS=-10V,ID=-18A) RDS(on)=37.5mMax.(VGS=-4.5V,ID=-18A) Lowinputcapacitance:Ciss | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | |
MOS FIELD EFFECT TRANSISTOR DESCRIPTION TheNP36P06KDGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)1=29.5mΩMAX.(VGS=−10V,ID=−18A) RDS(on)2=37.5mΩMAX.(VGS=−4.5V,ID=−18A) •Lowinputcapacitance | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
MOS FIELD EFFECT TRANSISTOR DESCRIPTION TheNP36P06KDGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)1=29.5mΩMAX.(VGS=−10V,ID=−18A) RDS(on)2=37.5mΩMAX.(VGS=−4.5V,ID=−18A) •Lowinputcapacitance | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
SWITCHING P-CHANNEL POWER MOS FET | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
SWITCHING P-CHANNEL POWER MOS FET | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
SWITCHING P-CHANNEL POWER MOS FET | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTORSWITCHINGP-CHANNELPOWERMOSFET DESCRIPTION TheNP36P06SLGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)1=30mΩMAX.(VGS=−10V,ID=−18A) RDS(on)2=40mΩMAX.(VGS=−4.5V,ID=−18A) •Lowinputcapacitance Ci | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
-60V–-36A–P-channelPowerMOSFETApplication:Automotive Description ThisproductisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features Superlowon-stateresistance:RDS(on)=30mMax.(VGS=-10V,ID=-18A) RDS(on)=40mMax.(VGS=-4.5V,ID=-18A) Lowinputcapacitance:Ciss=32 | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS |
详细参数
- 型号：
NP36P06KDG
- 制造商：
NEC
- 制造商全称：
NEC
- 功能描述：
MOS FIELD EFFECT TRANSISTOR
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
23+ |
TO-263 |
35400 |
全新原装真实库存含13点增值税票! |
询价 | ||
NEC |
08+(pbfree) |
TO-252 |
8866 |
询价 | |||
NEC |
23+ |
TO-252 |
11714 |
全新原装 |
询价 | ||
Renesas |
1822+ |
TO-263 |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
询价 | ||
23+ |
N/A |
90450 |
正品授权货源可靠 |
询价 | |||
NEC |
6000 |
面议 |
19 |
TO-252 |
询价 | ||
Renesas |
18+ |
TO-263 |
41200 |
原装正品,现货特价 |
询价 | ||
VB |
2019 |
TO263 |
55000 |
绝对原装正品假一罚十! |
询价 | ||
原厂 |
2020+ |
TO-263 |
20000 |
公司代理品牌,原装现货超低价清仓! |
询价 | ||
NEC |
23+ |
TO-263 |
10000 |
公司只做原装正品 |
询价 |
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