16 AMPERE SILICON RECTIFIER

[GENERAL INSTRUMENT] 16 AMPERE SILICON RECTIFIER FEATURES • Plastic package has Underwriters Laboratory Flammbility Classification 94V-O. • Exceeds Environomental standards of MIL-STD-19500. • High current capability • High surge capacity • Low forward voltage

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SWITCHING N-CHANNEL POWER MOS FET

FEATURES • Super low on-state resistance RDS(on) = 1.6 mΩ TYP. / 2.0 mΩ MAX. (VGS = 10 V, ID = 80 A) • High Current Rating ID(DC) = ±160 A

文件：287.7 Kbytes 页数：8 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

FEATURES • Super low on-state resistance RDS(on) = 1.6 mΩ TYP. / 2.0 mΩ MAX. (VGS = 10 V, ID = 80 A) • High Current Rating ID(DC) = ±160 A

文件：287.7 Kbytes 页数：8 Pages

NEC

瑞萨

SWITCHING N-CHANNEL POWER MOS FET

FEATURES • Super low on-state resistance RDS(on) = 1.6 mΩ TYP. / 2.0 mΩ MAX. (VGS = 10 V, ID = 80 A) • High Current Rating ID(DC) = ±160 A

文件：287.7 Kbytes 页数：8 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

FEATURES • Super low on-state resistance RDS(on) = 1.6 mΩ TYP. / 2.0 mΩ MAX. (VGS = 10 V, ID = 80 A) • High Current Rating ID(DC) = ±160 A

文件：287.7 Kbytes 页数：8 Pages

NEC

瑞萨

SWITCHING N-CHANNEL POWER MOS FET

FEATURES • Super low on-state resistance RDS(on) = 1.6 mΩ TYP. / 2.0 mΩ MAX. (VGS = 10 V, ID = 80 A) • High Current Rating ID(DC) = ±160 A

文件：287.7 Kbytes 页数：8 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

Description The NP160N04TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS(on) = 2.0 mΩ MAX. (VGS = 10 V, ID = 80 A) • Low Ciss: Ciss = 6900 pF TYP. (VDS = 25 V, VGS = 0 V) • Designed for automotive appli

文件：203.5 Kbytes 页数：8 Pages

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

Description The NP160N04TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS(on) = 2.0 mΩ MAX. (VGS = 10 V, ID = 80 A) • Low Ciss: Ciss = 6900 pF TYP. (VDS = 25 V, VGS = 0 V) • Designed for automotive appli

文件：203.5 Kbytes 页数：8 Pages

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

Description The NP160N04TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS(on) = 2.0 mΩ MAX. (VGS = 10 V, ID = 80 A) • Low Ciss: Ciss = 6900 pF TYP. (VDS = 25 V, VGS = 0 V) • Designed for automotive appli

文件：203.5 Kbytes 页数：8 Pages

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

Description The NP160N04TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance RDS(on) = 1.5 mΩ MAX. ( VGS = 10 V, ID = 80 A ) • Low Ciss: Ciss = 7200 pF TYP. ( VDS = 25 V ) • Designed for automotive applicat

文件：235.68 Kbytes 页数：8 Pages

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