isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 110A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.7mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：344.51 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 110A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.8mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：344.33 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 110A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.8mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：344.34 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 110A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.8mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：344.46 Kbytes 页数：2 Pages

ISC

无锡固电

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The NP110N04PUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on) = 1.8 mΩ MAX. (VGS = 10 V, ID = 55 A) • Low input capacitance Ciss = 9500 pF TYP. • Designed for automotive applicati

文件：318.28 Kbytes 页数：10 Pages

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MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The NP110N04PUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on) = 1.8 mΩ MAX. (VGS = 10 V, ID = 55 A) • Low input capacitance Ciss = 9500 pF TYP. • Designed for automotive applicati

文件：318.28 Kbytes 页数：10 Pages

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瑞萨

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The NP110N04PUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on) = 1.8 mΩ MAX. (VGS = 10 V, ID = 55 A) • Low input capacitance Ciss = 9500 pF TYP. • Designed for automotive applicati

文件：318.28 Kbytes 页数：10 Pages

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瑞萨

MOS FIELD EFFECT TRANSISTOR

Description The NP110N04PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features ● Super low on-state resistance RDS(on) = 1.4 mΩ MAX. (VGS = 10 V, ID = 55 A) ● Low Ciss: Ciss = 10500 pF TYP. (VDS = 25 V) Designed for automotive applicatio

文件：113.76 Kbytes 页数：8 Pages

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 110A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.4mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：345.03 Kbytes 页数：2 Pages

ISC

无锡固电

MOS FIELD EFFECT TRANSISTOR

Description The NP110N04PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features  Super low on-state resistance RDS(on) = 1.4 m MAX. (VGS = 10 V, ID = 55 A)  Low Ciss: Ciss = 10500 pF TYP. (VDS = 25 V)  Designed for automotive application

文件：271.53 Kbytes 页数：8 Pages

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