MOS FIELD EFFECT TRANSISTOR

Description The NP110N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features  Super low on-state resistance RDS(on) = 1.75 m MAX. (VGS = 10 V, ID = 55 A)  Low Ciss: Ciss = 10700 pF TYP. (VDS = 25 V)  Designed for automotive applicatio

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MOS FIELD EFFECT TRANSISTOR

Description The NP110N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features  Super low on-state resistance RDS(on) = 1.75 m MAX. (VGS = 10 V, ID = 55 A)  Low Ciss: Ciss = 10700 pF TYP. (VDS = 25 V)  Designed for automotive applicatio

文件：267.97 Kbytes 页数：8 Pages

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MOS FIELD EFFECT TRANSISTOR

Description The NP110N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance RDS(on) = 1.75 mΩ MAX. (VGS = 10 V, ID = 55 A) • Low Ciss: Ciss = 10700 pF TYP. (VDS = 25 V) • Designed for automotive applicati

文件：133.76 Kbytes 页数：8 Pages

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MOS FIELD EFFECT TRANSISTOR

Description The NP110N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance RDS(on) = 1.75 mΩ MAX. (VGS = 10 V, ID = 55 A) • Low Ciss: Ciss = 10700 pF TYP. (VDS = 25 V) • Designed for automotive applicati

文件：133.76 Kbytes 页数：8 Pages

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MOS FIELD EFFECT TRANSISTOR

Description The NP110N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features  Super low on-state resistance RDS(on) = 1.75 m MAX. (VGS = 10 V, ID = 55 A)  Low Ciss: Ciss = 10700 pF TYP. (VDS = 25 V)  Designed for automotive applicatio

文件：267.97 Kbytes 页数：8 Pages

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isc P-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= -15A@ TC=25℃ ·Drain Source Voltage -VDSS= -40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 40mΩ(Max)@VGS= -10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：298.25 Kbytes 页数：2 Pages

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无锡固电

-40V – -15A – P-channel Power MOS FET Application : Automotive

Description This product is P-channel MOS Field Effect Transistor designed for high current switching applications. Features  Super low on-state resistance : RDS(on) = 40 m Max. ( VGS = -10 V, ID = -7.5 A ) RDS(on) = 60 m Max. ( VGS = -4.5 V, ID = -7.5 A )  Low input capacitance : Ciss =

文件：1.45717 Mbytes 页数：8 Pages

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-40V – -15A – P-channel Power MOS FET Application : Automotive

Description This product is P-channel MOS Field Effect Transistor designed for high current switching applications. Features  Super low on-state resistance : RDS(on) = 40 m Max. ( VGS = -10 V, ID = -7.5 A ) RDS(on) = 60 m Max. ( VGS = -4.5 V, ID = -7.5 A )  Low input capacitance : Ciss =

文件：1.45717 Mbytes 页数：8 Pages

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isc P-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= -15A@ TC=25℃ ·Drain Source Voltage -VDSS= -60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 70mΩ(Max)@VGS= -10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：298.66 Kbytes 页数：2 Pages

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无锡固电

MOS FIELD EFFECT TRANSISTOR

Product Scout Automotive

文件：306.67 Kbytes 页数：9 Pages

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