NP

Sealed Industrial Pushbutton Switch

Features/Benefits •IP68sealed •1,000,000lifecycle •Multiplehousingstyles •Capableofupto5Aresistiveload •Wireleadoptionsavailable •RoHScompliant TypicalApplications •Harshenvironments •Off-Road •Industrial •Transportation •Military

NP

Standard non polarity series for using in polarity reversal circuits

NP0

MULTILAYER CERAMIC CAPACITORS

1.DESCRIPTION MLCCconsistsofaconductingmaterialandelectrodes.Tomanufactureachip-typeSMTandachieveminiaturization,highdensityandhighefficiency,ceramiccondensersareused. WTC’sMLCCismadebyNP0,X7R,X6S,X5RandY5Vdielectricmaterialandwhichprovidesproductwithhi

NP01PS

POWER SUPPLY FOR COLOR PLASMA DISPLAY MODULE

PowersupplyforNP4201MF02 DESCRIPTION ThepowersupplyNP01PShasbeendevelopedforevaluationpurposeofNP4201MF02(42-inchPDPmodule). Theinputvoltagerangesfrom100Vacto240Vac,whichcoversmostspecificationsthroughouttheworld.The NP01PShaspoweroutputsforaPDPmodule,

NP061A3

Silicon PNP epitaxial planar transistor

SiliconPNPepitaxialplanartransistor Fordigitalcircuits ■Features •SSS-Minitype6-pinpackage,reductionofthemountingareaand assemblycostbyonehalf •Maximumpackageheight(0.4mm)contributestodevelopthinner equipments ■BasicPartNumber •UNR31A3×2

NP062A1

Composite Transistors Silicon NPN epitaxial planar type

SiliconNPNepitaxialplanartype Fordigitalcircuits ■Features •Twoelementsincorporatedintoonepackage •Suitableforhigh-densitymountinganddownsizingoftheequipment •Contributetolowpowerconsumption

NP08

Up to 4000 Watts

SPECIALFEATURES Shortcircuitprotection Overvoltageprotection(OVP) Overcurrentprotection(OCP) Overtemperatureprotection(OTP) Activepowerfactorcorrection Outputon/offcontrol Fanspeedcontrol Powergoodsignal Activecurrentshare Remotevoltagesense SupportsMODBusRTU

NP0G3D2

Silicon PNP(NPN) epitaxial planar transistor (Tr1,2)

SiliconPNPepitaxialplanartransistor(Tr1) SiliconNPNepitaxialplanartransistor(Tr2) Fordigitalcircuits ■Features •Twoelementsincorporatedintoonepackage •Suitableforhighdensitypackageanddownsizingoftheequipment •Automaticinsertionwiththetapingispossible ■Ba

NP100N04MDH

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=100A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.3mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

NP100N04MUH

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=100A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.5mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.