| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
MOS FIELD EFFECT TRANSISTOR DESCRIPTION TheNP100P04PDGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)1=3.5mΩMAX.(VGS=−10V,ID=−50A) RDS(on)2=5.1mΩMAX.(VGS=−4.5V,ID=−50A) •Highcurrentrating:ID | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
MOS FIELD EFFECT TRANSISTOR DESCRIPTION TheNP100P04PDGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)1=3.5mΩMAX.(VGS=−10V,ID=−50A) RDS(on)2=5.1mΩMAX.(VGS=−4.5V,ID=−50A) •Highcurrentrating:ID | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
MOS FIELD EFFECT TRANSISTOR DESCRIPTION TheNP100P04PLGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)1=3.7mΩMAX.(VGS=−10V,ID=−50A) RDS(on)2=5.1mΩMAX.(VGS=−4.5V,ID=−50A) •Highcurrentrating:ID(D | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
MOS FIELD EFFECT TRANSISTOR DESCRIPTION TheNP100P04PLGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)1=3.7mΩMAX.(VGS=−10V,ID=−50A) RDS(on)2=5.1mΩMAX.(VGS=−4.5V,ID=−50A) •Highcurrentrating:ID(D | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
MOS FIELD EFFECT TRANSISTOR DESCRIPTION TheNP100P04PLGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)1=3.7mΩMAX.(VGS=−10V,ID=−50A) RDS(on)2=5.1mΩMAX.(VGS=−4.5V,ID=−50A) •Highcurrentrating:ID(D | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
MOS FIELD EFFECT TRANSISTOR DESCRIPTION TheNP100P06PDGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)1=6.0mΩMAX.(VGS=−10V,ID=−50A) RDS(on)2=7.8mΩMAX.(VGS=−4.5V,ID=−50A) •Highcurrentrating:ID( | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
-60V – -100A – P-channel Power MOS FET Application : Automotive Description ThisproductisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features Superlowon-stateresistance:RDS(on)=6.0mMax.(VGS=-10V,ID=-50A) RDS(on)=7.8mMax.(VGS=-4.5V,ID=-50A) Lowinputcapacitance:Ciss= | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
-60V – -100A – P-channel Power MOS FET Application : Automotive Description ThisproductisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features Superlowon-stateresistance:RDS(on)=6.0mMax.(VGS=-10V,ID=-50A) RDS(on)=7.8mMax.(VGS=-4.5V,ID=-50A) Lowinputcapacitance:Ciss= | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOS FIELD EFFECT TRANSISTOR DESCRIPTION TheNP100P06PDGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)1=6.0mΩMAX.(VGS=−10V,ID=−50A) RDS(on)2=7.8mΩMAX.(VGS=−4.5V,ID=−50A) •Highcurrentrating:ID( | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
MOS FIELD EFFECT TRANSISTOR DESCRIPTION TheNP100P06PDGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)1=6.0mΩMAX.(VGS=−10V,ID=−50A) RDS(on)2=7.8mΩMAX.(VGS=−4.5V,ID=−50A) •Highcurrentrating:ID( | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC |
详细参数
- 型号：
NP
- 制造商：
House of Batteries
- 功能描述：
- Bulk
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
22+ |
SOT-89 |
25000 |
只有原装原装,支持BOM配单 |
询价 | ||
松木 |
23+ |
TSOP-6 |
69820 |
终端可以免费供样,支持BOM配单! |
询价 | ||
2019+ |
24+ |
公司大量全新原装现货/长期供应 |
65300 |
一级代理/放心购买! |
询价 | ||
23+ |
TSSOP-8 |
16567 |
正品:QQ;2987726803 |
询价 | |||
PANASONIC/松下 |
23+ |
SOT523-3 |
15000 |
全新原装现货,价格优势 |
询价 | ||
VISHAY/威世 |
24+ |
NA/ |
10 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
Ai-Thinker(安信可) |
2447 |
DIP |
31500 |
20个/托盘一级代理专营品牌!原装正品,优势现货,长 |
询价 | ||
N/A |
2450+ |
SMT36 |
6540 |
只做原装正品现货或订货!终端客户免费申请样品! |
询价 | ||
FAIRCHILD |
23+ |
24000 |
现货库存 |
询价 | |||
ADI/亚德诺 |
QFN |
6698 |
询价 |
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