MOS FIELD EFFECT TRANSISTOR

Description The NP160N055TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS(on) = 3.0 mΩ MAX. (VGS = 10 V, ID = 80 A) • Low Ciss: Ciss = 6900 pF TYP. (VDS = 25 V, VGS = 0 V) • Designed for automotive appl

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MOS FIELD EFFECT TRANSISTOR

Features  Super low on-state resistance RDS(on) = 2.10 m MAX. (VGS = 10 V, ID = 80 A)  Low Ciss: Ciss = 7500 pF TYP. (VDS = 25 V)  Designed for automotive application and AEC-Q101 qualified

文件：277.88 Kbytes 页数：8 Pages

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MOS FIELD EFFECT TRANSISTOR

Description The NP160N055TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features ● Super low on-state resistance RDS(on) = 2.10 mΩ MAX. (VGS = 10 V, ID = 80 A) ● Low Ciss: Ciss = 7500 pF TYP. (VDS = 25 V) ● Designed for automotive applicatio

文件：112.21 Kbytes 页数：8 Pages

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MOS FIELD EFFECT TRANSISTOR

Features  Super low on-state resistance RDS(on) = 2.10 m MAX. (VGS = 10 V, ID = 80 A)  Low Ciss: Ciss = 7500 pF TYP. (VDS = 25 V)  Designed for automotive application and AEC-Q101 qualified

文件：277.88 Kbytes 页数：8 Pages

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瑞萨

MOS FIELD EFFECT TRANSISTOR

Features  Super low on-state resistance RDS(on) = 2.10 m MAX. (VGS = 10 V, ID = 80 A)  Low Ciss: Ciss = 7500 pF TYP. (VDS = 25 V)  Designed for automotive application and AEC-Q101 qualified

文件：277.88 Kbytes 页数：8 Pages

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瑞萨

MOS FIELD EFFECT TRANSISTOR

Description The NP160N055TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features ● Super low on-state resistance RDS(on) = 2.10 mΩ MAX. (VGS = 10 V, ID = 80 A) ● Low Ciss: Ciss = 7500 pF TYP. (VDS = 25 V) ● Designed for automotive applicatio

文件：112.21 Kbytes 页数：8 Pages

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瑞萨

MOS FIELD EFFECT TRANSISTOR

Features  Super low on-state resistance RDS(on) = 2.10 m MAX. (VGS = 10 V, ID = 80 A)  Low Ciss: Ciss = 7500 pF TYP. (VDS = 25 V)  Designed for automotive application and AEC-Q101 qualified

文件：277.88 Kbytes 页数：8 Pages

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

Description The NP160N055TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features ● Super low on-state resistance RDS(on) = 2.10 mΩ MAX. (VGS = 10 V, ID = 80 A) ● Low Ciss: Ciss = 7500 pF TYP. (VDS = 25 V) ● Designed for automotive applicatio

文件：112.21 Kbytes 页数：8 Pages

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16 AMPERE SILICON RECTIFIER

[GENERAL INSTRUMENT] 16 AMPERE SILICON RECTIFIER FEATURES • Plastic package has Underwriters Laboratory Flammbility Classification 94V-O. • Exceeds Environomental standards of MIL-STD-19500. • High current capability • High surge capacity • Low forward voltage

文件：98.05 Kbytes 页数：2 Pages

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16 AMPERE SILICON RECTIFIER

[GENERAL INSTRUMENT] 16 AMPERE SILICON RECTIFIER FEATURES • Plastic package has Underwriters Laboratory Flammbility Classification 94V-O. • Exceeds Environomental standards of MIL-STD-19500. • High current capability • High surge capacity • Low forward voltage

文件：98.05 Kbytes 页数：2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商