isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 100A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.4mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：344.11 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 100A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.5mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：344.12 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 100A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 3.25mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：345.18 Kbytes 页数：2 Pages

ISC

无锡固电

MOS FIELD EFFECT TRANSISTOR

Features  Super low on-state resistance RDS(on) = 3.25 m MAX. (VGS = 10 V, ID = 50 A)  Low Ciss: Ciss = 4900 pF TYP. (VDS = 25 V)  Designed for automotive application and AEC-Q101 qualified

文件：268.66 Kbytes 页数：8 Pages

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瑞萨

MOS FIELD EFFECT TRANSISTOR

Description The NP100N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance RDS(on) = 3.25 m MAX. (VGS = 10 V, ID = 50 A) • Low Ciss: Ciss = 4900 pF TYP. (VDS = 25 V) • Designed for automotive applicatio

文件：110 Kbytes 页数：8 Pages

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

Features  Super low on-state resistance RDS(on) = 3.25 m MAX. (VGS = 10 V, ID = 50 A)  Low Ciss: Ciss = 4900 pF TYP. (VDS = 25 V)  Designed for automotive application and AEC-Q101 qualified

文件：268.66 Kbytes 页数：8 Pages

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

Features  Super low on-state resistance RDS(on) = 3.25 m MAX. (VGS = 10 V, ID = 50 A)  Low Ciss: Ciss = 4900 pF TYP. (VDS = 25 V)  Designed for automotive application and AEC-Q101 qualified

文件：268.66 Kbytes 页数：8 Pages

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

Description The NP100N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance RDS(on) = 3.25 m MAX. (VGS = 10 V, ID = 50 A) • Low Ciss: Ciss = 4900 pF TYP. (VDS = 25 V) • Designed for automotive applicatio

文件：110 Kbytes 页数：8 Pages

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

Description The NP100N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance RDS(on) = 3.25 m MAX. (VGS = 10 V, ID = 50 A) • Low Ciss: Ciss = 4900 pF TYP. (VDS = 25 V) • Designed for automotive applicatio

文件：110 Kbytes 页数：8 Pages

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

Features  Super low on-state resistance RDS(on) = 3.25 m MAX. (VGS = 10 V, ID = 50 A)  Low Ciss: Ciss = 4900 pF TYP. (VDS = 25 V)  Designed for automotive application and AEC-Q101 qualified

文件：268.66 Kbytes 页数：8 Pages

RENESAS

瑞萨