MOS FIELD EFFECT TRANSISTOR

Description The NP100N04PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance RDS(on) = 2.3 mΩ MAX. ( VGS = 10 V, ID = 50 A ) • Low Ciss: Ciss = 4700 pF TYP. ( VDS = 25 V ) • Designed for automotive applicat

文件：231.81 Kbytes 页数：8 Pages

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瑞萨

MOS FIELD EFFECT TRANSISTOR

Description NP100N04PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features ･ Super low on-state resistance RDS(on) = 2.3 m MAX. ( VGS = 10 V, ID = 50 A ) ･ Low Ciss Ciss = 4700 pF TYP. ( VDS = 25 V ) ･ Designed for automotive application and

文件：823.71 Kbytes 页数：8 Pages

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

Description The NP100N04PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance RDS(on) = 2.3 mΩ MAX. ( VGS = 10 V, ID = 50 A ) • Low Ciss: Ciss = 4700 pF TYP. ( VDS = 25 V ) • Designed for automotive applicat

文件：231.81 Kbytes 页数：8 Pages

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

Description NP100N04PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features ･ Super low on-state resistance RDS(on) = 2.3 m MAX. ( VGS = 10 V, ID = 50 A ) ･ Low Ciss Ciss = 4700 pF TYP. ( VDS = 25 V ) ･ Designed for automotive application and

文件：823.71 Kbytes 页数：8 Pages

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

Description NP100N04PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features ･ Super low on-state resistance RDS(on) = 2.3 m MAX. ( VGS = 10 V, ID = 50 A ) ･ Low Ciss Ciss = 4700 pF TYP. ( VDS = 25 V ) ･ Designed for automotive application and

文件：823.71 Kbytes 页数：8 Pages

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

Description The NP100N04PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance RDS(on) = 2.3 mΩ MAX. ( VGS = 10 V, ID = 50 A ) • Low Ciss: Ciss = 4700 pF TYP. ( VDS = 25 V ) • Designed for automotive applicat

文件：231.81 Kbytes 页数：8 Pages

RENESAS

瑞萨

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 100A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.8mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：371.06 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 100A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.9mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：371.48 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 100A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.8mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：280.23 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 100A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.9mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：280.66 Kbytes 页数：2 Pages

ISC

无锡固电