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PHP10N60E

PowerMOStransistorsAvalancheenergyrated

GENERALDESCRIPTION N-channel,enhancementmodefield-effectpowertransistor,intendedforuseinoff-lineswitchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuitsandgeneralpurposeswitchingapplications. ThePHP10N60Eissupplied

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

PHP10N60E

N-Channel650V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

PHP10N60E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.75Ω(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

PHP10N60FE

N-Channel650V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

PJF10N60

600VN-ChannelEnhancementModeMOSFET

FEATURES •10A,600V,RDS(ON)=1.0Ω@VGS=10V,ID=5.0A •LowONResistance •FastSwitching •LowGateCharge •FullyCharacterizedAvalancheVoltageandCurrent •SpeciallyDesigenedforACAdapter,BatteryChargeandSMPS •IncompliancewithEURoHs2002/95/ECDirectives

PANJITPan Jit International Inc.

強茂強茂股份有限公司

PJP10N60

600VN-ChannelEnhancementModeMOSFET

FEATURES •10A,600V,RDS(ON)=1.0Ω@VGS=10V,ID=5.0A •LowONResistance •FastSwitching •LowGateCharge •FullyCharacterizedAvalancheVoltageandCurrent •SpeciallyDesigenedforACAdapter,BatteryChargeandSMPS •IncompliancewithEURoHs2002/95/ECDirectives

PANJITPan Jit International Inc.

強茂強茂股份有限公司

RMP10N60HD

N-CHANNELENHANCEMENTMODEPOWERMOSFET

100%AvalancheTest FastSwitchingCharacteristic SimpleDriveRequirement RoHSCompliant&Halogen-Free

RECTRON

Rectron Semiconductor

SDF10N60

SuperhighdensecelldesignforlowRDS(ON).

SamhopSamHop Microelectronics Corp.

三合微科三合微科股份有限公司

SFF10N60

N-ChannelMOSFET

semiWell

SemiWell Semiconductor

SGB10N60

HighSpeed2-Technology

•Designedfor: -TV–HorizontalLineDeflection •2ndgenerationHighSpeed-Technology for1200Vapplicationsoffers: -lossreductioninresonantcircuits -temperaturestablebehavior -parallelswitchingcapability -tightparameterdistribution -EoffoptimizedforIC=3A -simpleGa

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

产品属性

  • 产品编号:

    NGTB10N60FG

  • 制造商:

    onsemi

  • 类别:

    分立半导体产品 > 晶体管 - UGBT、MOSFET - 单

  • 包装:

    散装

  • 不同 Vge、Ic 时 Vce(on)(最大值):

    1.7V @ 15V,10A

  • 输入类型:

    标准

  • 25°C 时 Td(开/关)值:

    40ns/145ns

  • 测试条件:

    300V,10A,30 欧姆,15V

  • 工作温度:

    150°C(TJ)

  • 安装类型:

    通孔

  • 封装/外壳:

    TO-220-3 整包

  • 供应商器件封装:

    TO-220F-3FS

  • 描述:

    IGBT 600V 10A TO220F3

供应商型号品牌批号封装库存备注价格
onsemi(安森美)
24+
TO-220F
942
原厂订货渠道,支持BOM配单一站式服务
询价
ONSEMI/安森美
25+
TO-220F
32360
ONSEMI/安森美全新特价NGTB10N60FG即刻询购立享优惠#长期有货
询价
三年内
1983
只做原装正品
询价
ON(安森美)
2447
TO-247-3
105000
50个/管一级代理专营品牌!原装正品,优势现货,长期
询价
ON
1809+
TO-220-3
1675
就找我吧!--邀您体验愉快问购元件!
询价
ON
24+
NA
3000
进口原装 假一罚十 现货
询价
ON Semiconductor
22+
TO220F3FS
9000
原厂渠道,现货配单
询价
ON Semiconductor
23+
TO220F3FS
9000
原装正品,支持实单
询价
ON
15+
TO-220F
33
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
ON/安森美
TO-220
1000
进口原装现货假一赔万力挺实单
询价
更多NGTB10N60FG供应商 更新时间2025-7-25 8:12:00