NESG4030M14-T3中文资料瑞萨数据手册PDF规格书

厂商型号	NESG4030M14-T3
功能描述	NPN SiGe:C RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD (M14, 1208 PKG)
文件大小	112.49 Kbytes
页面数量	10 页
生产厂商	Renesas Electronics America
企业简称	NEC【瑞萨】
中文名称	日本瑞萨电子株式会社官网
原厂标识
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-7-5 20:00:00
人工找货	NESG4030M14-T3价格和库存，欢迎联系客服免费人工找货

NPN SiGe:C RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD (M14, 1208 PKG)

FEATURES

• The device is an ideal choice for low noise, high-gain amplification

NF = 1.1 dB TYP., Ga = 11.5 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 5.8 GHz

• Maximum stable power gain: MSG = 15 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 5.8 GHz

• SiGe:C HBT technology (UHS4) adopted

• Improvement of ESD protection

• 4-pin lead-less minimold (M14, 1208 PKG)

型号：
NESG4030M14-T3
制造商：
NEC
制造商全称：
NEC
功能描述：
NPN
SiGe：
C RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD(M14, 1208 PKG)