首页 >NE76184A高频三极管>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
GENERALPURPOSEFETN-CHANNELGaAsMESFET SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
GaAsMESFET GENERALPURPOSEFETN-CHANNELGaAsMESFET DESCRIPTION NE76184AisaN-channelGaAsMESFEThousedinceramic package.Thedeviceisfabricatedbyionimplantationfor improvedRFandDCperformancereliabilityanduniformity.Its excellentlownoiseandhighassociatedgainmakeitsuitabl | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
GENERALPURPOSELTOX-BANDGaAsMESFET DESCRIPTION NE76184ASisahighperformancegalliumarsenidemetalsemiconductorfieldeffecttransistorhousedinanepoxysealed,metal/ceramicpackage.Itslownoisefiguremakesthisdeviceappropriateforuseinthesecondorthirdstagesoflownoiseamplifiersoperatinginthe1-12GHzfre | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
GaAsMESFET GENERALPURPOSEFETN-CHANNELGaAsMESFET DESCRIPTION NE76184AisaN-channelGaAsMESFEThousedinceramic package.Thedeviceisfabricatedbyionimplantationfor improvedRFandDCperformancereliabilityanduniformity.Its excellentlownoiseandhighassociatedgainmakeitsuitabl | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
GENERALPURPOSEFETN-CHANNELGaAsMESFET SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
GENERALPURPOSELTOX-BANDGaAsMESFET DESCRIPTION NE76184ASisahighperformancegalliumarsenidemetalsemiconductorfieldeffecttransistorhousedinanepoxysealed,metal/ceramicpackage.Itslownoisefiguremakesthisdeviceappropriateforuseinthesecondorthirdstagesoflownoiseamplifiersoperatinginthe1-12GHzfre | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
GENERALPURPOSELTOX-BANDGaAsMESFET DESCRIPTION NE76184ASisahighperformancegalliumarsenidemetalsemiconductorfieldeffecttransistorhousedinanepoxysealed,metal/ceramicpackage.Itslownoisefiguremakesthisdeviceappropriateforuseinthesecondorthirdstagesoflownoiseamplifiersoperatinginthe1-12GHzfre | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
GaAsMESFET LtoXBANDOSC N-CHANNELGaAsMESFET DESCRIPTION NE76184BisaN-channelGaAsMESFEThousedinceramic package.Thedeviceisfabricatedbyionimplantationfor improvedRFandDCperformancereliabilityanduniformity. FEATURES •Lownoisefigure&Highassociatedgain NF=0.8dBTY | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS |
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