SILICON TRANSISTOR

NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER FEATURES • P–1 = 24 dBm TYP. @f = 1.9 GHz, VCC = 3.6 V, ICq = 1 mA (Class AB), Duty = 1/8 • 4-Pin Mini Mold Package EIAJ: SC-61

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RENESAS

瑞萨

NPN SILICON EPITAXIAL TRANSISTOR

DESCRIPTION The NE68939 is a low voltage, NPN Silicon Bipolar Transistor for pulsed power applications. The device is designed to operate from a 3.6 V supply, and deliver over 1/4 watt of power output at frequencies up to 2.0 GHZ with a 1:8 duty cycle. These characteristics make it an ideal devic

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NEC

瑞萨

NPN SILICON EPITAXIAL TRANSISTOR

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CEL

模块

UBLOX

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GPS

U-BLOX

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