Dual N-Channel Enhancement Mode Field Effect Transistor

General Description SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These

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FAIRCHILD

仙童半导体

Dual N-Channel Enhancement Mode Field Effect Transistor

ONSEMI

安森美半导体

N-channel enhancement mode field-effect transistor

Description Dual N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Features ■ Low on-state resistance ■ Fast switching ■ TrenchMOS™ technology. Applications ■ DC to DC convertors ■ DC motor control ■ Lithium-ion battery applications ■ N

文件：272.81 Kbytes 页数：13 Pages

PHI

PHI

N-channel enhancement mode field-effect transistor

Description Dual N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Features ■ Low on-state resistance ■ Fast switching ■ TrenchMOS™ technology. Applications ■ DC to DC convertors ■ DC motor control ■ Lithium-ion battery applications ■ N

文件：272.81 Kbytes 页数：13 Pages

PHI

PHI

Dual N-Channel 2.5-V (G-S) MOSFET

Dual N-Channel 2.5-V (G-S) MOSFET 2.5-V Rated

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VISHAYVishay Siliconix

威世威世科技公司