NDS356AP

-30V P 沟道逻辑电平增强型场效应晶体管; • -1.1 A, -30 VrDS(ON) = 0.3 Ω @ VGS = -4.5 VrDS(ON) = 0.2 Ω @ VGS = -10 V\n• Industry Standard Outline SOT-23 Surface Mount Package Using Proprietary SuperSOT™-3 Design for Superior Thermal and Electrical Capabilities.\n• High Density Cell Design for Extremely Low rDS(ON)\n• Exceptional On-Resistance and Maximum DC Current Capability\n;

SuperSOT™-3 P沟道逻辑电平增强型场效应晶体管采用飞兆专有的高密度DMOS技术生产而成。 这种密度非常高的工艺是专为最大限度地降低导通阻抗而定制的。 这些器件特别适合笔记本电脑电源管理、便携电子产品及其他电池供电电路等低电压应用，此类应用需要在很小尺寸的表面贴装封装中实现快速高侧开关和低线内功率损耗。

NDS356AP

P-Channel Logic Level Enhancement Mode Field Effect Transistor

GeneralDescription SuperSOTTM-3P-ChannellogiclevelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thesedevicesareparticular

NDS356AP-NL

P-Channel 30 V (D-S) MOSFET

NDS356P

P-ChannelLogicLevelEnhancementModeFieldEffectTransistor

GeneralDescription TheseP-ChannellogiclevelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thesedevicesareparticularlysuit

NDS356P

P-Channel20-V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •LoadSwitch •PASwitch •DC/DCConverters

NGRUS356

NeutralGroundingResistorSystem,NGRSERIES–US

Description High-resistancegroundingpreventsmanyoftheproblems thatareassociatedwithungroundedandsolidlygrounded electricaldistributionandutilizationsystems.High-resistance groundingcanlimitpoint-of-faultdamage,eliminatetransient overvoltages,reducethearc-flashhazar