N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suit

文件：76.45 Kbytes 页数：6 Pages

Fairchild

仙童半导体

丝印：351A；Package：SOT-23；N-Channel, Logic Level, PowerTrench® MOSFET

General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are particularly suited for low v

文件：231.93 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

文件：486.17 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suit

文件：75.67 Kbytes 页数：6 Pages

Fairchild

仙童半导体

丝印：351AN；Package：SOT23；N-Channel Enhancement Mode MOSFET

Features ® Vos =30Vio = 2A Rosin

文件：910.89 Kbytes 页数：3 Pages

TECHPUBLIC

台舟电子

N 沟道，逻辑电平，PowerTrench® MOSFET，30V，1.4A，160mΩ

这些N沟道逻辑电平MOSFET采用飞兆半导体先进的PowerTrench工艺生产，这一先进工艺是专为最大限度地降低通态电阻并保持卓越开关性能而定制的。 此类器件特别适合笔记本电脑、便携电话、PCMCIA卡等低电压应用及其他需要采用极小封装外形表面贴装封装、具有快速开关和低线内功率损耗的电池供电电路。 •1.4A, 30 V\n•RDS(ON) = 160 mΩ @ VGS = 10 V\n•RDS(ON) = 250 mΩ @ VGS = 4.5 V\n•超低栅极电荷\n•工业标准外形SOT-23表面贴装封装采用专有SuperSOTTM-3设计，具有优异的热性能和电气性能\n•高性能沟道技术可实现极低的RDS(ON);

ONSEMI

安森美半导体

N 沟道逻辑电平增强型场效应晶体管，30V，1.1A，250mΩ

这些N沟道逻辑电平增强型场效应晶体管采用Fairchild专有的高单元密度、DMOS技术生产。 这种密度非常高的工艺是专为最大限度地降低通态电阻而定制的。 此类器件特别适合笔记本电脑、便携电话、PCMCIA卡等低电压应用及其他需要采用极小封装外形表面贴装封装、具有快速开关和低线内功率损耗的电池供电电路。 •1.1 A，30 V。 RDS(ON) = 0.25Ω @ VGS= 4.5 V。\n•专有封装设计使用铜引线框架，可提供出色的热和电气能力。\n•通态电阻RDS(ON)极低的高密度单元设计。\n•出色的导通阻抗和最大的DC电流能力。\n•紧凑型工业标准SOT-23表面贴装封装。;

ONSEMI

安森美半导体