NDS331

N-Channel Logic Level Enhancement Mode Field Effect Transistor

GeneralDescription TheseN-ChannellogiclevelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thesedevicesareparticularlysui

NDS331

N-Channel Logic Level Enhancement Mode Field Effect Transistor;

NDS331N

N 沟道逻辑电平增强型场效应晶体管，20V，1.3A，0.21Ω; •1.3 A，20 V。 RDS(ON) = 0.21 Ω @ VGS = 2.7 V RDS(ON) = 0.16 Ω @ VGS = 4.5 V\n•采用专有SuperSOT™-3技术设计的工业标准SOT-23表面贴装封装，可实现卓越的热性能和电气性能\n•高密度设计可实现极低的RDS(ON)\n•出色的导通阻抗和最大DC电流能力\n;

这些N沟道逻辑电平增强模式场效应晶体管采用飞兆专有的高单元密度、DMOS技术生产。 这种密度非常高的工艺是专为最大限度地降低导通阻抗而定制的。 此类器件特别适合笔记本电脑、便携电话、PCMCIA卡等低电压应用及其他需要采用极小封装外形表面贴装封装、具有快速开关和低线内功率损耗的电池供电电路。

NDS331N

N-Channel Logic Level Enhancement Mode Field Effect Transistor

GeneralDescription TheseN-ChannellogiclevelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thesedevicesareparticularlysui

NDS331N

丝印：A2SHB；Package：SOT-23；N-Channel Enhancement Mode MOSFET

GeneralFeatures VDS=20VID=2.3A RDS(ON)

NDS331N-NL

N-Channel 20 V (D-S) MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •DC/DCConverters •LoadSwitchforPortableApplications

NDS331N

丝印：331M；Package：SOT-23-3；N-Channel Logic Level Enhancement Mode Field Effect Transistor