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NDP508A

N-Channel Enhancement Mode Field Effect Transistor

General Description These N-channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, a

文件:73.44 Kbytes 页数:6 Pages

Fairchild

仙童半导体

NDP508A

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 19A@ TC=25℃ ·Drain Source Voltage -VDSS= 80V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.08Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件:296.09 Kbytes 页数:2 Pages

ISC

无锡固电

NDP508AE

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 19A@ TC=25℃ ·Drain Source Voltage -VDSS= 80V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.08Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件:296.11 Kbytes 页数:2 Pages

ISC

无锡固电

NDP508AE

N-Channel Enhancement Mode Field Effect Transistor

General Description These N-channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, a

文件:73.44 Kbytes 页数:6 Pages

Fairchild

仙童半导体

NDP508B

N-Channel Enhancement Mode Field Effect Transistor

General Description These N-channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, a

文件:73.44 Kbytes 页数:6 Pages

Fairchild

仙童半导体

NDP508B

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 17A@ TC=25℃ ·Drain Source Voltage -VDSS= 80V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.1Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件:295.66 Kbytes 页数:2 Pages

ISC

无锡固电

NDP508BE

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 17A@ TC=25℃ ·Drain Source Voltage -VDSS= 80V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.1Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件:295.68 Kbytes 页数:2 Pages

ISC

无锡固电

NDP508BE

N-Channel Enhancement Mode Field Effect Transistor

General Description These N-channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, a

文件:73.44 Kbytes 页数:6 Pages

Fairchild

仙童半导体

详细参数

  • 型号:

    NDP508

  • 制造商:

    FAIRCHILD

  • 制造商全称:

    Fairchild Semiconductor

  • 功能描述:

    N-Channel Enhancement Mode Field Effect Transistor

供应商型号品牌批号封装库存备注价格
KA
6000
面议
19
TO-220
询价
NS/国半
2447
TO220
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
NS
23+
TO220
50000
全新原装正品现货,支持订货
询价
NS
9806+
TO220
45
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
NS
24+
NA/
45
优势代理渠道,原装正品,可全系列订货开增值税票
询价
NS
2023+
TO220
8800
正品渠道现货 终端可提供BOM表配单。
询价
NDP
23+
SOT23-6
50000
全新原装正品现货,支持订货
询价
NDP
23+
SOT23-6
25640
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
NDP(芯潭微)
23+
SOT-23-6
570
10年专业做电源IC/原装现货库存
询价
24+
3000
公司存货
询价
更多NDP508供应商 更新时间2025-10-31 15:34:00