NDP410AE中文资料下载行情报价仙童半导体-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
NDP410A	文件：74 Kbytes Page：6 Pages	N-Channel Enhancement Mode Field Effect Transistor General Description These N-channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, a 文件：74 Kbytes 页数：6 Pages	Fairchild 仙童半导体	Fairchild
NDP410A	文件：295.96 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 9A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.25Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. 文件：295.96 Kbytes 页数：2 Pages	ISC 无锡固电	ISC
NDP410AE	文件：295.99 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 9A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.25Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. 文件：295.99 Kbytes 页数：2 Pages	ISC 无锡固电	ISC
NDP410AE	文件：74 Kbytes Page：6 Pages	N-Channel Enhancement Mode Field Effect Transistor General Description These N-channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, a 文件：74 Kbytes 页数：6 Pages	Fairchild 仙童半导体	Fairchild
NDP410B	文件：74 Kbytes Page：6 Pages	N-Channel Enhancement Mode Field Effect Transistor General Description These N-channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, a 文件：74 Kbytes 页数：6 Pages	Fairchild 仙童半导体	Fairchild
NDP410B	文件：295.63 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 8A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.3Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. 文件：295.63 Kbytes 页数：2 Pages	ISC 无锡固电	ISC
NDP410BE	文件：295.65 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 8A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.3Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. 文件：295.65 Kbytes 页数：2 Pages	ISC 无锡固电	ISC
NDP410BE	文件：74 Kbytes Page：6 Pages	N-Channel Enhancement Mode Field Effect Transistor General Description These N-channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, a 文件：74 Kbytes 页数：6 Pages	Fairchild 仙童半导体	Fairchild

详细参数

型号：
NDP410
制造商：
FAIRCHILD
制造商全称：
Fairchild Semiconductor
功能描述：
N-Channel Enhancement Mode Field Effect Transistor

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市近平电子有限公司	NDP410AE	KA	6000	面议	19	TO-220	询价
京海半导体(深圳)有限公司	NDP410AE	VB	21+	TO220AB	10000	原装现货假一罚十	询价
深圳市河锋鑫科技有限公司	NDP410AE	F	22+	TO220AB	6000	十年配单,只做原装	询价
深圳市一线半导体有限公司	NDP410AL		24+		3000	公司存货	询价
深圳市星佑电子有限公司	NDP410AL	NSC	06+	原厂原装	3893	只做全新原装真实现货供应	询价
深圳市弘为电子有限公司	NDP410AL	FAIRCHILD	24+	原装进口原厂原包接受订货	2866	原装现货假一罚十	询价
深圳市威尔健半导体有限公司	NDP410AL	NS/国半	23+	TO-220	50000	全新原装正品现货,支持订货	询价
深圳市安富世纪电子有限公司	NDP410AL	FSC	23+	TO-220	50000	全新原装正品现货,支持订货	询价
深圳市威雅利发展有限公司	NDP410AL	FSC	97+	TO-220	3081	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市华来深电子有限公司	NDP410AL	NSC	23+	TO-220	8560	受权代理!全新原装现货特价热卖!	询价

更多NDP410供应商更新时间2025-11-1 16:30:00

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