首页 >NDF10N60ZG>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
AdvancedPowerMOSFET BVDSS=600V RDS(on)=0.8Ω ID=9A FEATURES AvalancheRuggedTechnology RuggedGateOxideTechnology LowerInputCapacitance ImprovedGateCharge ExtendedSafeOperatingArea LowerLeakageCurrent:25µA(Max.)@VDS=600V LowRDS(ON):0.646(Typ.) | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
600VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandh | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-Channel650V(D-S)PowerMOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-Channel650V(D-S)PowerMOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-ChEnhancementModePowerMOSFET | SECOS SeCoS Halbleitertechnologie GmbH | SECOS | ||
N-ChEnhancementModePowerMOSFET | SECOS SeCoS Halbleitertechnologie GmbH | SECOS | ||
AdvancedPowerMOSFET AdvancedPowerMOSFET BVDSS=600VRDS(on)=0.8ID=5.1A FEATURES AvalancheRuggedTechnology RuggedGateOxideTechnology LowerInputCapacitance ImprovedGateCharge ExtendedSafeOperatingArea LowerLeakageCurrent:25(Max.)@VDS=600V LowRDS(ON):0.646(T | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-Channel650V(D-S)PowerMOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
600VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandh | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
600VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-CHANNEL10A-600VD2PAKLOGICLEVELIGBT N-CHANNEL10A-600VD2PAKLOGICLEVELIGBT ■HIGHINPUTIMPEDANCE(VOLTAGEDRIVEN) ■VERYLOWON-VOLTAGEDROP(Vcesat) ■LOWTHRESHOLDVOLTAGE(LOGICLEVELINPUT) ■HIGHCURRENTCAPABILITY ■OFFLOSSESINCLUDETAILCURRENT ■SURFACE-MOUNTINGD2PAK(TO-263)POWERPACKAGEINTUBE(NOSUFFIX) | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
N-CHANNEL10A-600VTO-220LOGICLEVELIGBT N-CHANNEL10A-600VTO-220LOGICLEVELIGBT ■HIGHINPUTIMPEDANCE(VOLTAGEDRIVEN) ■VERYLOWON-VOLTAGEDROP(Vcesat) ■LOWTHRESHOLDVOLTAGE(LOGICLEVELINPUT) ■HIGHCURRENTCAPABILITY ■OFFLOSSESINCLUDETAILCURRENT APPLICATIONS ■ELECTRONICIGNITION ■LIGHTDIMMER ■STATICRELAY | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
N-CHANNEL10A-600VTO-220LOGICLEVELIGBT N-CHANNEL10A-600VTO-220LOGICLEVELIGBT ■HIGHINPUTIMPEDANCE(VOLTAGEDRIVEN) ■VERYLOWON-VOLTAGEDROP(Vcesat) ■LOWTHRESHOLDVOLTAGE(LOGICLEVELINPUT) ■HIGHCURRENTCAPABILITY ■OFFLOSSESINCLUDETAILCURRENT APPLICATIONS ■ELECTRONICIGNITION ■LIGHTDIMMER ■STATICRELAY | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
N-Channel650V(D-S)PowerMOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-Channel650V(D-S)PowerMOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-channelMOSFET | SEMIPOWERXian Semipower Electronic Technology Co., Ltd. 芯派科技芯派科技股份有限公司 | SEMIPOWER | ||
N-channelTO-220FMOSFET | SEMIPOWERXian Semipower Electronic Technology Co., Ltd. 芯派科技芯派科技股份有限公司 | SEMIPOWER |
详细参数
- 型号：
NDF10N60ZG
- 功能描述：
MOSFET NFET T0220FP 600V 10A .65
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
1321+ROHS全新 |
原厂原封优势特卖 |
21868 |
原装现货在线咨询样品※技术支持专业电子元器件授权 |
询价 | |||
ON |
2020+ |
TO220 |
9500 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
ON |
21+ |
SOP8 |
5000 |
专营原装正品现货,当天发货,可开发票! |
询价 | ||
ON |
2021+ |
TO-220F |
9450 |
原装现货。 |
询价 | ||
ON/安森美 |
2021+ |
TO-220F |
12000 |
勤思达 只做原装 现货库存 |
询价 | ||
ON |
2019 |
TO220 |
26500 |
原装正品钻石品质假一赔十 |
询价 | ||
ON |
18+ |
TO-220F |
86 |
只做原装正品 |
询价 | ||
onsemi(安森美) |
23+ |
TO-220F |
7828 |
支持大陆交货,美金交易。原装现货库存。 |
询价 | ||
ON |
08+(pbfree) |
TO-2203LEADFULLPA |
8866 |
询价 | |||
ON |
23+ |
TO-220 |
8890 |
价格优势/原装现货/客户至上/欢迎广大客户来电查询 |
询价 |
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