N-Channel Enhancement Mode Field Effect Transistor

General Description These N-channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, a

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FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 40A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 42mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电

N CHANNEL JUNCTION TYPE (HIGH, AM HIGH, AUDIO FREQUENCY AMPLIFIER APPLICATIONS)

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TOSHIBA

东芝

GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case

Description TSTS710. series are infrared emitting diodes in standard GaAs technology in a hermetically sealed TO–18 package. Their glass lenses provide a very high radiant intensity without external optics.     Features • Very high radiant intensity • Suitable for pulse operation • Narrow an

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VISHAYVishay Siliconix

威世威世科技公司

AUTOMOTIVE GLOW PLUG DRIVER

DESCRIPTION The VN710SP is a monolithic device made using STMicroelectronics VIPower M0-3 technology, intended for driving any kind of load with one side connected to ground. Active VCC pin voltage clamp protects the device against low energy spikes (see ISO7637 transients compatibility table). A

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STMICROELECTRONICS

意法半导体