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NCV51705

Single 6 A High-Speed, Low-Side SiC MOSFET Driver

The NCV51705 driver is designed to primarily drive SiC MOSFET transistors. To achieve the lowest possible conduction losses, the driver is capable to deliver the maximum allowable gate voltage to the SiC MOSFET device. By providing high peak current during turn−on and turn−off, switching losse

文件:450.02 Kbytes 页数:21 Pages

ONSEMI

安森美半导体

NCV51705

Single 6 A High-Speed, Low-Side SiC MOSFET Driver

文件:392.25 Kbytes 页数:19 Pages

ONSEMI

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NCV51705

车用SiC MOSFET驱动器,下桥,单6A高速

The NCV51705 driver is designed to primarily drive SiC MOSFET transistors. To achieve the lowest possible conduction losses, the driver is capable to deliver the maximum allowable gate voltage to the SiC MOSFET device. By providing high peak current during turn−on and turn−off, switching losses are • High Peak Output Current with Split Output Stages\n• Allow independent Turn−ON/Turn−OFF Adjustment\n• Extended Positive Voltage Rating up to 28 V Max\n• Efficient SiC MOSFET Operation during the Conduction Period\n• User−adjustable Built−in Negative Charge Pump (-3.3 V to -8 V)\n• Fast Turn−off an;

ONSEMI

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NCV51705_V01

Single 6 A High-Speed, Low-Side SiC MOSFET Driver

The NCV51705 driver is designed to primarily drive SiC MOSFET transistors. To achieve the lowest possible conduction losses, the driver is capable to deliver the maximum allowable gate voltage to the SiC MOSFET device. By providing high peak current during turn−on and turn−off, switching losse

文件:450.02 Kbytes 页数:21 Pages

ONSEMI

安森美半导体

NCV51705MNTWG

Single 6 A High-Speed, Low-Side SiC MOSFET Driver

The NCV51705 driver is designed to primarily drive SiC MOSFET transistors. To achieve the lowest possible conduction losses, the driver is capable to deliver the maximum allowable gate voltage to the SiC MOSFET device. By providing high peak current during turn−on and turn−off, switching losse

文件:450.02 Kbytes 页数:21 Pages

ONSEMI

安森美半导体

NCV51705D

Single 6 A High-Speed, Low-Side SiC MOSFET Driver

文件:392.25 Kbytes 页数:19 Pages

ONSEMI

安森美半导体

NCV51705MNTWG

Single 6 A High-Speed, Low-Side SiC MOSFET Driver

文件:392.25 Kbytes 页数:19 Pages

ONSEMI

安森美半导体

NCV51705MNTWG

Package:24-VFQFN 裸露焊盘;包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 类别:集成电路(IC) 栅极驱动器 描述:IC GATE DRVR LOW-SIDE 24QFN

ONSEMI

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技术参数

  • Pb-free:

    Pb

  • AEC Qualified:

    A

  • Halide free:

    H

  • PPAP Capablee:

    P

  • Status:

    Active

  • Power Switch:

    SiC MOSFET

  • Number of Outputs:

    1

  • Topology:

    Single

  • Isolation Type:

    Non-Isolated

  • Package Type:

    QFNW-24

供应商型号品牌批号封装库存备注价格
ON
25+
QFN
30000
代理全新原装现货,价格优势
询价
ON(安森美)
2447
8-SOIC
115000
3000个/圆盘一级代理专营品牌!原装正品,优势现货,
询价
ON/安森美
21+
SMD
30000
优势供应 实单必成 可开增值税13点
询价
ON
24+
NA
3000
进口原装 假一罚十 现货
询价
onsemi(安森美)
2021+
QFN-24
499
询价
ON(安森美)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
询价
ON
2004+
QFN
10
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
ON/安森美
20+
SMD
1000
进口原装现货假一赔万力挺实单
询价
ON
23+
24-QFNW
2122
正规渠道,只有原装!
询价
ON/安森美
22+
SMD
18000
原装正品
询价
更多NCV51705供应商 更新时间2025-12-15 17:05:00