NCV51705_V01中文资料安森美半导体数据手册PDF规格书

The NCV51705 driver is designed to primarily drive SiC MOSFET

transistors. To achieve the lowest possible conduction losses, the

driver is capable to deliver the maximum allowable gate voltage to the

SiC MOSFET device. By providing high peak current during turn−on

and turn−off, switching losses are also minimized. For improved

reliability, dV/dt immunity and even faster turn−off, the NCV51705

can utilize its on−board charge pump to generate a user selectable

negative voltage rail.

For full compatibility and to minimize the complexity of the bias

solution in isolated gate drive applications the NCV51705 also

provides an externally accessible 5 V rail to power the secondary side

of digital or high speed opto isolators.

The NCV51705 offers important protection functions such as

under−voltage lockout monitoring for the bias power.

特性 Features

• Automotive Qualified to AEC−Q100 with Grade 1 Temperature

Range

• High Peak Output Current with Split Output Stages to Allow

Independent Turn−ON/Turn−OFF Adjustment;

♦ Source Capability: 6 A

♦ Sink Capability: 6 A

• Extended Positive Voltage Rating for Efficient SiC MOSFET

Operation during the Conduction Period

• Adjustable, On−board Regulated Charge Pump

• Negative Voltage Drive for Fast Turn−off

• Built−in Negative Charge Pump

• Accessible 5 V Reference / Bias Rail for Digital Oscillator Supply

• Adjustable Under−Voltage Lockout

• Desaturation Function

• Small & Low Parasitic Inductance QFN24 Package with Wettable Flank

Typical Applications

• Driving SiC MOSFET for Automotive Applications

• Automotive Inverters, Converter, and Motor Drivers

• PFC, AC to DC and DC to DC Converters