NCV51563BBDWR2G中文资料安森美半导体数据手册PDF规格书

The NCV51563 are isolated dual−channel gate drivers with

4.5−A/9−A source and sink peak current respectively. They are

designed for fast switching to drive power MOSFETs, and SiC

MOSFET power switches. The NCV51563 offers short and matched

propagation delays.

Two independent and 5 kVRMS internal galvanic isolation from

input to each output and internal functional isolation between the two

output drivers allows a working voltage of up to 1850 VDC. This driver

can be used in any possible configurations of two low side, two

high−side switches or a half−bridge driver with programmable dead

time.

An ENA/DIS pin shutdowns both outputs simultaneously when set

low or high for ENABLE or DISABLE mode respectively.

The NCV51563 offers other important protection functions such as

independent under−voltage lockout for both gate drivers and a Dead

Time adjustment function.

Features

• Flexible: Dual Low−Side, Dual High−Side or Half−Bridge Gate Driver

• 4.5−A Peak Source, 9−A Peak Sink Output Current Capability

• Independent UVLO Protections for Both Output Drivers

• Output Supply Voltage from 6.5 V to 30 V with 5−V and 8−V for

MOSFET, 13−V and 17−V UVLO for SiC, Thresholds

• Common Mode Transient Immunity CMTI > 200 V/ns

• Propagation Delay Typical 36 ns with

♦ 5 ns Max Delay Matching per Channel

♦ 5 ns Max Pulse−Width Distortion

• User Programmable Input Logic

♦ Single or Dual−input Modes via ANB

♦ ENABLE or DISABLE Mode

• User Programmable Dead−Time

• AEC−Q100 Qualified for Automotive Application Requirements

• Isolation & Safety

♦ 5 kVRMS Isolation for 1 Minute (per UL1577 Requirements)

♦ 8000 VPK Reinforced Isolation Voltage (per VDE0884−11 Requirements)

♦ CQC Certification per GB4943.1−2011

♦ SGS FIMO Certification per IEC 62386−1

• These are Pb−Free Devices

Typical Applications

• On−board Chargers

• XEV DC−DC Converters

• Traction Inverters

• Charging Stations