NCV51705中文资料车用SiC MOSFET驱动器，下桥，单6A高速数据手册ONSEMI规格书

描述 Description

The NCV51705 driver is designed to primarily drive SiC MOSFET transistors. To achieve the lowest possible conduction losses, the driver is capable to deliver the maximum allowable gate voltage to the SiC MOSFET device. By providing high peak current during turn−on and turn−off, switching losses are also minimized. For improved reliability, dV/dt immunity and even faster turn−off, the NCV51705 can utilize its on−board charge pump to generate a user selectable negative voltage rail.
For isolated applications, the NCV51705 also provides an externally accessible 5 V rail to power the secondary side of digital or high speed opto isolators.

特性 Features

• High Peak Output Current with Split Output Stages
• Allow independent Turn−ON/Turn−OFF Adjustment
• Extended Positive Voltage Rating up to 28 V Max
• Efficient SiC MOSFET Operation during the Conduction Period
• User−adjustable Built−in Negative Charge Pump (-3.3 V to -8 V)
• Fast Turn−off and Robust dV/dt Immunity
• Accessible 5 V Reference / Bias Rail
• Minimize complexity of bias supply in isolated gate drive applications
• Adjustable Under−Voltage Lockout
• Sufficient VGS amplitude to match SiC best performance
• Fast Desaturation Function
• Self protection of the design
• QFN24 Package 4 x 4 mm
• Small & Low Parasitic Inductance package
• AEC-Qualifiied
• For SiC high power modules in HEV/EV

应用 Application

• High Perfomance Inverters
• High Power PFC
• High Power SiC Modules
• On Board Chargers
• Traction Inverters
• High Power DC/DC converters

简介

NCV51705属于集成电路（IC）的栅极驱动器。由ONSEMI制造生产的NCV51705栅极驱动器栅极驱动器电源管理集成电路 (PMIC) 可用于提供隔离、放大、参考位移、自举或其他必要功能，这些功能可将来自电源转换应用中控制设备的信号连接到电源被控制通过的半导体设备（通常为 FET 或 IGBT）。任何特定设备提供的确切功能各不相同，但与它适合驱动的半导体配置相关。