丝印：NCE75ED65VT4；Package：TO-247-4L；650V 75A Trench FS Gen.7 IGBT

General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features  Trench field stop Gen.7 Technology Offerin

文件：1.10096 Mbytes 页数：8 Pages

NCEPOWER

新洁能

丝印：NCE75H25；Package：TO-220；NCE N-Channel Enhancement Mode Power MOSFET (Primary)

Description The NCE75H25 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 75V,ID =250A RDS(ON)

文件：654.96 Kbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：NCE75H25T；Package：TO-247；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE75H25T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 75V,ID =250A RDS(ON)

文件：693.56 Kbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：NCE75H35TC；Package：TO-247；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE75H35TC uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in automotive applications and a wide variety of other applications. General Features ● VDSS =75V,ID =350A RDS(ON)

文件：343.21 Kbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：NCE75T120VT；Package：TO-247；1200V, 75A, Trench FS II Fast IGBT

General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench FSII Technology Offering  Very low VCE(sat)

文件：1.26636 Mbytes 页数：8 Pages

NCEPOWER

新洁能

丝印：NCE75TD120BT；Package：TO-247；1200V, 75A, Trench FS II Fast IGBT

General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench FSII Technology Offering  Very low VCE(sat)

文件：1.86808 Mbytes 页数：10 Pages

NCEPOWER

新洁能

丝印：NCE75TD120BT4；Package：TO-247-4L；1200V, 75A, Trench FS II Fast IGBT

General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench FSII Technology Offering  Very low VCE(sat)

文件：1.53405 Mbytes 页数：8 Pages

NCEPOWER

新洁能

丝印：NCE75TD120BTP；Package：TO-247P；1200V, 75A, Trench FS II Fast IGBT

General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench FSII Technology Offering  Very low VCE(sat)

文件：1.51833 Mbytes 页数：8 Pages

NCEPOWER

新洁能

丝印：NCE75TD120BTP4；Package：TO-247P-4L；1200V, 75A, Trench FS II Fast IGBT

General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench FSII Technology Offering  Very low VCE(sat)

文件：1.50734 Mbytes 页数：8 Pages

NCEPOWER

新洁能

丝印：NCE75TD120VT；Package：TO-247；1200V, 75A, Trench FS II Fast IGBT

General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features ⚫ Trench FSII Technology Offering ⚫ Very low VCE(sat

文件：468.49 Kbytes 页数：10 Pages

NCEPOWER

新洁能