丝印：N30；Package：DFN3030-8B；N-Channel 30-V (D-S) MOSFET

文件：1.19717 Mbytes 页数：5 Pages

LRC

乐山无线电

丝印：N3009SS；Package：SO-8；30V N-CHANNEL ENHANCEMENT MODE MOSFET

Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.  Motor Control  Backlighting  Power Management Functions  DC-DC Converters

文件：478.49 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：N306AD；Package：TO-251AA；N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs 30V, 50A, 6m?

General Description This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching fre

文件：254.57 Kbytes 页数：11 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

丝印：N306AD；Package：TO-252AA；N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs 30V, 50A, 6m?

General Description This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching fre

文件：254.57 Kbytes 页数：11 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

丝印：N3030LS；Package：SO-8；SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET

文件：183.28 Kbytes 页数：6 Pages

DIODES

美台半导体

N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs

General Description This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequen

文件：122.52 Kbytes 页数：10 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs

General Description This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequen

文件：253.25 Kbytes 页数：11 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 3.2m?

General Description This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching fre

文件：269.83 Kbytes 页数：11 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 3.2m?

General Description This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching fre

文件：269.83 Kbytes 页数：11 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Ferrites and accessories

文件：188.91 Kbytes 页数：6 Pages

EPCOS

爱普科斯